UNSPECIFIED (1998) High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices. In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), AUG 26-30, 1997, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.

Full text not available from this repository.

Abstract

Si 30 nm/Si0.78Ge0.22 5 nm superlattices were grown on (0 0 1) Si by solid source molecular beam epitaxy (MBE) at temperatures between 550 degrees C and 810 degrees C. Their structural properties were studied by high depth resolution RES analysis. The sample grown at the highest temperature has the sharpest interfaces, correlating well with the observation by Raman spectroscopy of zone-folded acoustic modes. The Si and SiGe layer thickness and the Ge concentration were determined, and agree with sub-keV secondary ion mass spectroscopy (SIMS) results. Channelling shows a minimum yield better than 3%, denoting a good crystalline quality of the layers. (C) 1998 Elsevier Science B.V.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Journal or Publication Title:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0168-583X
Date:	April 1998
Volume:	139
Number:	1-4
Number of Pages:	5
Page Range:	pp. 239-243
Publication Status:	Published
Title of Event:	5th European Conference on Accelerators in Applied Research and Technology (ECAART5)
Location of Event:	EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS
Date(s) of Event:	AUG 26-30, 1997
URI:	http://wrap.warwick.ac.uk/id/eprint/15580

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item