High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices
UNSPECIFIED (1998) High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices. In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), AUG 26-30, 1997, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.Full text not available from this repository.
Si 30 nm/Si0.78Ge0.22 5 nm superlattices were grown on (0 0 1) Si by solid source molecular beam epitaxy (MBE) at temperatures between 550 degrees C and 810 degrees C. Their structural properties were studied by high depth resolution RES analysis. The sample grown at the highest temperature has the sharpest interfaces, correlating well with the observation by Raman spectroscopy of zone-folded acoustic modes. The Si and SiGe layer thickness and the Ge concentration were determined, and agree with sub-keV secondary ion mass spectroscopy (SIMS) results. Channelling shows a minimum yield better than 3%, denoting a good crystalline quality of the layers. (C) 1998 Elsevier Science B.V.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS|
|Publisher:||ELSEVIER SCIENCE BV|
|Number of Pages:||5|
|Page Range:||pp. 239-243|
|Title of Event:||5th European Conference on Accelerators in Applied Research and Technology (ECAART5)|
|Location of Event:||EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS|
|Date(s) of Event:||AUG 26-30, 1997|
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