UNSPECIFIED (1998) Fabrication of TiNi shape memory alloy microactuators by ion beam sputter deposition. In: 5th Joint Tokyo/Warwick Biennial Nanotechnology Symposium, SCI UNIV TOKYO, NODA CAMPUS, TOKYO, JAPAN, SEP 03-05, 1997. Published in: NANOTECHNOLOGY, 9 (2). pp. 67-71.

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Abstract

We report on the production of thin films of TiNi shape memory alloy, grown by ion beam sputter deposition (IBSD) using a Kaufman-type source, for microactuator applications. IBSD is a vacuum-coating process in which a target is bombarded by accelerated ions from a showered ion beam source and sputtered atoms of the target material are deposited onto a nearby substrate. In this work, argon ions at energies up to 1500 eV and current densities of similar to 1 mA cm(-2) are used to bombard sectored targets of titanium and nickel in order to deposit TiNi films onto unheated substrates. The films were characterized by electrical resistivity measurements and x-ray reflectometry. R-phase and martensitic transformations are seen without high-temperature annealing and the shape memory properties are compared with those of films prepared by DC and RF magnetron sputtering.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology Q Science > QC Physics
Journal or Publication Title:	NANOTECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0957-4484
Official Date:	June 1998
Dates:	Date Event June 1998 UNSPECIFIED
Volume:	9
Number:	2
Number of Pages:	5
Page Range:	pp. 67-71
Publication Status:	Published
Title of Event:	5th Joint Tokyo/Warwick Biennial Nanotechnology Symposium
Location of Event:	SCI UNIV TOKYO, NODA CAMPUS, TOKYO, JAPAN
Date(s) of Event:	SEP 03-05, 1997
URI:	http://wrap.warwick.ac.uk/id/eprint/15584

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