Fabrication of TiNi shape memory alloy microactuators by ion beam sputter deposition
UNSPECIFIED (1998) Fabrication of TiNi shape memory alloy microactuators by ion beam sputter deposition. In: 5th Joint Tokyo/Warwick Biennial Nanotechnology Symposium, SCI UNIV TOKYO, NODA CAMPUS, TOKYO, JAPAN, SEP 03-05, 1997. Published in: NANOTECHNOLOGY, 9 (2). pp. 67-71.Full text not available from this repository.
We report on the production of thin films of TiNi shape memory alloy, grown by ion beam sputter deposition (IBSD) using a Kaufman-type source, for microactuator applications. IBSD is a vacuum-coating process in which a target is bombarded by accelerated ions from a showered ion beam source and sputtered atoms of the target material are deposited onto a nearby substrate. In this work, argon ions at energies up to 1500 eV and current densities of similar to 1 mA cm(-2) are used to bombard sectored targets of titanium and nickel in order to deposit TiNi films onto unheated substrates. The films were characterized by electrical resistivity measurements and x-ray reflectometry. R-phase and martensitic transformations are seen without high-temperature annealing and the shape memory properties are compared with those of films prepared by DC and RF magnetron sputtering.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||NANOTECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Number of Pages:||5|
|Page Range:||pp. 67-71|
|Title of Event:||5th Joint Tokyo/Warwick Biennial Nanotechnology Symposium|
|Location of Event:||SCI UNIV TOKYO, NODA CAMPUS, TOKYO, JAPAN|
|Date(s) of Event:||SEP 03-05, 1997|
Actions (login required)