SiGe heterostructures for FET applications
UNSPECIFIED (1998) SiGe heterostructures for FET applications. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 31 (12). pp. 1397-1416. ISSN 0022-3727Full text not available from this repository.
The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and ill-V modulation-doped FETs. In this article the electrical properties of this semiconductor system and the associated materials challenges are discussed, and some of the more important device applications are reviewed.
|Item Type:||Journal Item|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS D-APPLIED PHYSICS|
|Publisher:||IOP PUBLISHING LTD|
|Date:||21 June 1998|
|Number of Pages:||20|
|Page Range:||pp. 1397-1416|
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