UNSPECIFIED (1998) SiGe heterostructures for FET applications. [Journal Item]

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Abstract

The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and ill-V modulation-doped FETs. In this article the electrical properties of this semiconductor system and the associated materials challenges are discussed, and some of the more important device applications are reviewed.

Item Type:	Journal Item
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF PHYSICS D-APPLIED PHYSICS
Publisher:	IOP PUBLISHING LTD
ISSN:	0022-3727
Date:	21 June 1998
Volume:	31
Number:	12
Number of Pages:	20
Page Range:	pp. 1397-1416
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/15590

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