Structure and stability of the Si(001) c(4x4)-Sb surface
UNSPECIFIED (1998) Structure and stability of the Si(001) c(4x4)-Sb surface. PHYSICAL REVIEW B, 57 (20). R12701-R12704. ISSN 0163-1829Full text not available from this repository.
Results of low-energy electron diffraction, Auger electron diffraction, low-energy ion scattering, and ab initio pseudopotential studies of submonolayer coverages of Sb on the Si(001) surface indicate the existence of an ordered c(4x4)-Sb reconstruction between 0.2 and 0.3 ML. Analysis of the ion-scattering data from this surface suggests an overlaid above-row structure in which Sb dimers are situated directly above Si dimer rows. Ab initio pseudopotential calculations support this conclusion and confirm that such a uniform distribution of Sb ad-dimers only becomes stable for a very narrow coverage range around 0.25 ML.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW B|
|Publisher:||AMERICAN PHYSICAL SOC|
|Date:||15 May 1998|
|Number of Pages:||4|
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