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Structure and stability of the Si(001) c(4x4)-Sb surface
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UNSPECIFIED (1998) Structure and stability of the Si(001) c(4x4)-Sb surface. PHYSICAL REVIEW B, 57 (20). R12701-R12704. ISSN 0163-1829
Full text not available from this repository.Abstract
Results of low-energy electron diffraction, Auger electron diffraction, low-energy ion scattering, and ab initio pseudopotential studies of submonolayer coverages of Sb on the Si(001) surface indicate the existence of an ordered c(4x4)-Sb reconstruction between 0.2 and 0.3 ML. Analysis of the ion-scattering data from this surface suggests an overlaid above-row structure in which Sb dimers are situated directly above Si dimer rows. Ab initio pseudopotential calculations support this conclusion and confirm that such a uniform distribution of Sb ad-dimers only becomes stable for a very narrow coverage range around 0.25 ML.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | PHYSICAL REVIEW B |
| Publisher: | AMERICAN PHYSICAL SOC |
| ISSN: | 0163-1829 |
| Date: | 15 May 1998 |
| Volume: | 57 |
| Number: | 20 |
| Number of Pages: | 4 |
| Page Range: | R12701-R12704 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/15688 |
Data sourced from Thomson Reuters' Web of Knowledge
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