Peculiarities of electronic properties of delta(Sb) layers in epitaxial silicon. IV. Hopping conductivity and nonlinear effects
UNSPECIFIED. (1998) Peculiarities of electronic properties of delta(Sb) layers in epitaxial silicon. IV. Hopping conductivity and nonlinear effects. LOW TEMPERATURE PHYSICS, 24 (3). pp. 182-188. ISSN 1063-777XFull text not available from this repository.
The temperature dependence of the kinetic electronic characteristics (conductivity, magnetoresistance, Hall e.m.f.) is studied in the temperature interval 3-50 K on epitaxial silicon crystals having a delta[Sb] layer with sheet concentrations of Sb atoms 1 X 10(13) and 5 x 10(12) cm(-2). The shape of the current-voltage characteristics is determined at various temperatures. It is found that the low-temperature kinetic phenomena in these objects are governed by the hopping mechanism of conductivity. A variable range hopping conductivity is observed at sufficiently low temperatures (< 10 K). The nonlinearity of the current-voltage characteristics is explained by the theory of non-Ohmic hopping conductivity in moderately strong electric fields. (C) 1998 American Institute of Physics. [S1063-777X(98)00603-3].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||LOW TEMPERATURE PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||March 1998|
|Number of Pages:||7|
|Page Range:||pp. 182-188|
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