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Performance of parallel connected SiC MOSFETs under short circuits conditions
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Wu, Ruizhu, Mendy, Simon, Agbo, Nereus, Gonzalez, Jose Ortiz, Jahdi, Saeed and Alatise, Olayiwola M. (2021) Performance of parallel connected SiC MOSFETs under short circuits conditions. Energies, 14 (20). 6834. doi:10.3390/en14206834
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Official URL: http://dx.doi.org/10.3390/en14206834
Abstract
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and threshold voltages (VTH). The results show that VTH variation is the most critical factor affecting reduced robustness of parallel devices under SC. The SC current conducted per device is shown to increase under parallel connection compared to single device measurements. VTH shift from bias–temperature–instability (BTI) is known to occur in SiC MOSFETs, hence this paper combines BTI and SC tests. The results show that a positive VGS stress on the gate before the SC measurement reduces the peak SC current by a magnitude that is proportional to VGS stress time. Repeating the measurements at elevated temperatures reduces the time dependency of the VTH shift, thereby indicating thermal acceleration of negative charge trapping. VTH recovery is also observed using SC measurements. Similar measurements are performed on Si IGBTs with no observable impact of VGS stress on SC measurements. In conclusion, a test methodology for investigating the impact of BTI on SC characteristics is presented along with key results showing the electrothermal dynamics of parallel devices under SC conditions.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science > WMG (Formerly the Warwick Manufacturing Group) | ||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Metal oxide semiconductor field-effect transistors -- Reliability, Short circuits , Electric circuits, Parallel | ||||||
| Journal or Publication Title: | Energies | ||||||
| Publisher: | M.D.P.I.A.G. | ||||||
| ISSN: | 1996-1073 | ||||||
| Official Date: | 19 October 2021 | ||||||
| Dates: |
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| Volume: | 14 | ||||||
| Number: | 20 | ||||||
| Article Number: | 6834 | ||||||
| DOI: | 10.3390/en14206834 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Open Access | ||||||
| RIOXX Funder/Project Grant: |
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