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Reassessment of the intrinsic bulk recombination in crystalline silicon

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Niewelt, T., Steinhauser, B., Richter, A., Veith-Wolf, B., Fell, A., Hammann, B., Grant, Nicholas E., Black, L., Tang, J., Youssef, A., Murphy, J. D., Schmidt, J., Schubert, M. C. and Glunz, S. W. (2022) Reassessment of the intrinsic bulk recombination in crystalline silicon. Solar Energy Materials and Solar Cells, 235 . 111467. doi:10.1016/j.solmat.2021.111467

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Official URL: https://doi.org/10.1016/j.solmat.2021.111467

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Abstract

Characterisation and optimization of next-generation silicon solar cell concepts rely on an accurate knowledge of intrinsic charge carrier recombination in crystalline silicon. Reports of measured lifetimes exceeding the previous accepted parameterisation of intrinsic recombination indicate an overestimation of this recombination in certain injection regimes and hence the need for revision. In this work, twelve high-quality silicon sample sets covering a wide doping range are fabricated using state-of-the-art processing routes in order to permit an accurate assessment of intrinsic recombination based on wafer thickness variation. Special care is taken to mitigate extrinsic recombination due to bulk contamination or at the wafer surfaces. The combination of the high-quality samples with refined sample characterisation and lifetime measurements enables a much higher level of accuracy to be achieved compared to previous studies. We observe that reabsorption of luminescence photons inside the sample must be accounted for to achieve a precise description of radiative recombination. With this effect taken into account, we extract the lifetime limitation due to Auger recombination. We find that the extracted Auger recombination rate can accurately be parameterized using a physically motivated equation based on Coulomb-enhanced Auger recombination for all doping and injection conditions relevant for silicon-based photovoltaics. The improved accuracy of data description obtained with the model suggests that our new parameterisation is more consistent with the actual recombination process than previous models. Due to notable changes in Auger recombination predicted for moderate injection, we further revise the fundamental limiting power conversion efficiency for a single-junction crystalline silicon solar cell to 29.4%, which is within 0.1%abs compared to other recent assessments.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Solar cells -- Materials, Charge carrier processes , Silicon crystals
Journal or Publication Title: Solar Energy Materials and Solar Cells
Publisher: Elsevier Science BV
ISSN: 0927-0248
Official Date: January 2022
Dates:
DateEvent
January 2022Published
24 November 2021Available
22 October 2021Accepted
Volume: 235
Article Number: 111467
DOI: 10.1016/j.solmat.2021.111467
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/M024911/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
RPG-2020-377Leverhulme Trusthttp://dx.doi.org/10.13039/501100000275
0324204 AGermany (West). Bundesministerium für Wirtschafthttp://viaf.org/viaf/146582432
0324204CGermany (West). Bundesministerium für Wirtschafthttp://viaf.org/viaf/146582432
0324204DGermany (West). Bundesministerium für Wirtschafthttp://viaf.org/viaf/146582432
RND017Australian Renewable Energy Agencyhttp://dx.doi.org/10.13039/501100005105

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