An X-ray diffraction study of oxide removal from InSb(001) substrates
UNSPECIFIED (1998) An X-ray diffraction study of oxide removal from InSb(001) substrates. In: 6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6), UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES, JUN 23-27, 1997. Published in: Surface Science, 123 pp. 141-145.Full text not available from this repository.
A study of the removal of the native oxide from InSb(001) substrates using X-ray diffraction and Auger electron spectroscopy is reported. Several methods have been investigated to produce atomically flat, oxide free, surfaces. These include thermal annealing, argon ion bombardment at both room temperature and elevated temperature, and irradiation of the surface with atomic hydrogen. The quality of the resulting c(8 X 2) surface gave a good indication of the relative success of each technique. The reflected X-ray intensity was measured as a function of perpendicular momentum transfer l along the specular (00l) rod and gives a clear indication of the roughness of each surface. The lateral order was determined from the width of the in-plane fractional order reflections. The results show a marked improvement in surface order when using hydrogen irradiation/annealing as opposed to thermal annealing alone. A more significant improvement in surface quality, however, was noted when sputtering at elevated temperature. (C) 1998 Elsevier Science B.V.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||January 1998|
|Number of Pages:||5|
|Page Range:||pp. 141-145|
|Title of Event:||6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6)|
|Location of Event:||UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES|
|Date(s) of Event:||JUN 23-27, 1997|
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