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Structural determination for H2O adsorption on Si(001)2x1 using scanned-energy mode photoelectron diffraction
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UNSPECIFIED (1998) Structural determination for H2O adsorption on Si(001)2x1 using scanned-energy mode photoelectron diffraction. In: 6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6), UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES, JUN 23-27, 1997. Published in: Surface Science, 123 pp. 219-222.
Full text not available from this repository.Abstract
Using scanned-energy-mode photoelectron diffraction we have determined the local adsorption geometry of the OH fragments adsorbed on Si(100)(2 X 1) surface. On this substrate water is known to adsorb dissociatively even at low temperature (90 K), which gives rise to a surface layer comprising coadsorbed OH and H species. The OH fragments are found to be adsorbed in off-atop sites at a dimerised surface Si atom with O-Si bond-lengths of 1.7 +/- 0.1 Angstrom and bond-angles relative to the surface normal of 22 +/- 5 degrees. (C) 1998 Elsevier Science B.V.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | Surface Science |
| Publisher: | ELSEVIER SCIENCE BV |
| ISSN: | 0169-4332 |
| Date: | January 1998 |
| Volume: | 123 |
| Number of Pages: | 4 |
| Page Range: | pp. 219-222 |
| Publication Status: | Published |
| Title of Event: | 6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6) |
| Location of Event: | UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES |
| Date(s) of Event: | JUN 23-27, 1997 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/15991 |
Data sourced from Thomson Reuters' Web of Knowledge
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