UNSPECIFIED (1998) Structural determination for H2O adsorption on Si(001)2x1 using scanned-energy mode photoelectron diffraction. In: 6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6), UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES, JUN 23-27, 1997. Published in: Surface Science, 123 pp. 219-222. ISSN 0169-4332.

Full text not available from this repository, contact author.

Request Changes to record.

Abstract

Using scanned-energy-mode photoelectron diffraction we have determined the local adsorption geometry of the OH fragments adsorbed on Si(100)(2 X 1) surface. On this substrate water is known to adsorb dissociatively even at low temperature (90 K), which gives rise to a surface layer comprising coadsorbed OH and H species. The OH fragments are found to be adsorbed in off-atop sites at a dimerised surface Si atom with O-Si bond-lengths of 1.7 +/- 0.1 Angstrom and bond-angles relative to the surface normal of 22 +/- 5 degrees. (C) 1998 Elsevier Science B.V.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	Surface Science
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0169-4332
Official Date:	January 1998
Dates:	Date Event January 1998 UNSPECIFIED
Volume:	123
Number of Pages:	4
Page Range:	pp. 219-222
Publication Status:	Published
Title of Event:	6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6)
Location of Event:	UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES
Date(s) of Event:	JUN 23-27, 1997

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item