Structural determination for H2O adsorption on Si(001)2x1 using scanned-energy mode photoelectron diffraction
UNSPECIFIED (1998) Structural determination for H2O adsorption on Si(001)2x1 using scanned-energy mode photoelectron diffraction. In: 6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6), UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES, JUN 23-27, 1997. Published in: Surface Science, 123 pp. 219-222.Full text not available from this repository.
Using scanned-energy-mode photoelectron diffraction we have determined the local adsorption geometry of the OH fragments adsorbed on Si(100)(2 X 1) surface. On this substrate water is known to adsorb dissociatively even at low temperature (90 K), which gives rise to a surface layer comprising coadsorbed OH and H species. The OH fragments are found to be adsorbed in off-atop sites at a dimerised surface Si atom with O-Si bond-lengths of 1.7 +/- 0.1 Angstrom and bond-angles relative to the surface normal of 22 +/- 5 degrees. (C) 1998 Elsevier Science B.V.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Number of Pages:||4|
|Page Range:||pp. 219-222|
|Title of Event:||6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6)|
|Location of Event:||UNIV WALES CARDIFF, DEPT PHYS & ASTRON, CARDIFF, WALES|
|Date(s) of Event:||JUN 23-27, 1997|
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