Ultralow energy secondary ion mass spectrometry and transient yields at the silicon surface
UNSPECIFIED (1998) Ultralow energy secondary ion mass spectrometry and transient yields at the silicon surface. In: 4th Meeting of the Ultra-Shallow Junctions Workshop on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, RES TRIANGLE PK, NORTH CAROLINA, APR 07-09, 1997. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 16 (1). pp. 302-305.Full text not available from this repository.
The use of a normal incidence sub-kev O-2(+) beam in secondary ion mass spectrometry (SIMS) depth profiling minimizes the widths of the transient regions at the surface of a shallow profile in addition to providing a very high depth resolution, At 300 eV we show that the transient width in silicon is <1 nm, and that the ion yields are relatively insensitive to the presence of native oxide. This suggests that ideal conditions for the profiling of very shallow implants are available at 300 eV and below. Nevertheless, the transient signals reflect differences in the thickness of native oxide, as well as differences in primary beam energy, and could, in principle, be used to measure process and wafer age related differences in the top few nm. We present one of the earliest attempts to accurately calibrate the depth in the pre-equilibrium region of a SIMS profile, taking account of the variation in erosion rate. (C) 1998 American Vacuum Society.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B|
|Publisher:||AMER INST PHYSICS|
|Official Date:||January 1998|
|Number of Pages:||4|
|Page Range:||pp. 302-305|
|Title of Event:||4th Meeting of the Ultra-Shallow Junctions Workshop on Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors|
|Location of Event:||RES TRIANGLE PK, NORTH CAROLINA|
|Date(s) of Event:||APR 07-09, 1997|
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