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Room temperature enhancement of electronic materials by superacid analogues
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Pain, Sophie, Grant, Nicholas E. and Murphy, John D. (2022) Room temperature enhancement of electronic materials by superacid analogues. ACS Nano, 16 (1). pp. 1260-1270. doi:10.1021/acsnano.1c09085 ISSN 1936-0851.
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Official URL: https://doi.org/10.1021/acsnano.1c09085
Abstract
Treatment with the superacid bis(trifluoromethanesulfonyl)amide (sometimes known as TFSA, TFSI, or HNTf2) enhances the properties of a wide range of optoelectronic materials, resulting in longer effective carrier lifetimes and higher photoluminescence quantum yields. We have conducted a multimaterial study treating both crystalline silicon and transition metal dichalcogenide (TMDC) monolayers and few-layer flakes with solutions formed from TFSA and a range of compounds with related chemical structures with different Lewis acidities, in order to elucidate the factors underpinning the TFSA-related class of enhancement treatments. We adopt dichloromethane (DCM) as a common solvent as it provides good results at room temperature and is potentially less hazardous than TFSA-dichloroethane (DCE) heated to ∼100 °C, which has been used previously. Kelvin probe experiments on silicon demonstrate that structurally similar chemicals give passivating films with substantially different charge levels, with the higher levels of charge associated with the presence of CF3SO2 groups resulting in longer effective lifetimes due to an enhancement in field-effect passivation. Treatment with all analogue solutions used results in enhanced photoluminescence in MoS2 and WS2 compared to untreated controls. Importantly we find that MoS2 and WS2 can be enhanced by analogues to TFSA that lack sulfonyl groups, meaning an alternative mechanism to that proposed in computational reports for TFSA enhancement must apply.
| Item Type: | Journal Article | ||||||
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| Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Photoluminescence, Electronics -- Materials, Silicon, Superacids, Integrated circuits -- Passivation, Transition metals, Optoelectronics | ||||||
| Journal or Publication Title: | ACS Nano | ||||||
| Publisher: | American Chemical Society | ||||||
| ISSN: | 1936-0851 | ||||||
| Official Date: | 3 January 2022 | ||||||
| Dates: |
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| Volume: | 16 | ||||||
| Number: | 1 | ||||||
| Page Range: | pp. 1260-1270 | ||||||
| DOI: | 10.1021/acsnano.1c09085 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||
| Date of first compliant deposit: | 25 January 2022 | ||||||
| Date of first compliant Open Access: | 25 January 2022 | ||||||
| RIOXX Funder/Project Grant: |
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