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The optimization of 3.3 kV 4H-SiC JBS diodes
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Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M. (2022) The optimization of 3.3 kV 4H-SiC JBS diodes. IEEE Transactions on Electron Devices, 69 (1). pp. 298-303. doi:10.1109/ted.2021.3129705 ISSN 1557-9646.
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Official URL: https://doi.org/10.1109/ted.2021.3129705
Abstract
The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and molybdenum contact metals. In this design, the same implants used in the optimized termination region are used to form the P-regions in the JBS active area. The width and spacing of the P-regions are varied to optimize both the ON- and OFF-state of the device. All the diodes tested displayed high blocking voltages and ideal turn-on characteristics up to the rated current of 2 A. However, the leakage current and the Schottky barrier height (SBH) were found to scale with the ratio of Schottky to p + regions. Full Schottkys, without p + regions, and those with very wide Schottky regions had the lowest SBH (1.61 eV for Ni, 1.11 eV for Mo, and 0.87 eV for Ti) and the highest leakage. Those diodes with the lowest Schottky openings of 2 μm had the lowest OFF-state leakage, but they suffered severe pinching from the surrounding p + regions, increasing their SBH. The best performing JBS diodes were Ni and Mo devices with the narrowest pitch, with the p + implants/Schottky regions both 2 μm wide. These offered the best balanced device design, with excellent OFF-state performance, while the Schottky ratio guaranteed a relatively low forward voltage drop.
| Item Type: | Journal Article | |||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| SWORD Depositor: | Library Publications Router | |||||||||
| Library of Congress Subject Headings (LCSH): | Diodes, Schottky-barrier, Diodes, Schottky-barrier -- Design, Silicon carbide, Wide gap semiconductors -- Materials, Power electronics -- Materials | |||||||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | |||||||||
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) | |||||||||
| ISSN: | 1557-9646 | |||||||||
| Official Date: | January 2022 | |||||||||
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| Volume: | 69 | |||||||||
| Number: | 1 | |||||||||
| Page Range: | pp. 298-303 | |||||||||
| DOI: | 10.1109/ted.2021.3129705 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Reuse Statement (publisher, data, author rights): | ** Article version: VoR ** From Crossref journal articles via Jisc Publications Router ** Licence for VoR version of this article starting on 01-01-2021: https://creativecommons.org/licenses/by/4.0/legalcode | |||||||||
| Access rights to Published version: | Open Access (Creative Commons) | |||||||||
| Date of first compliant deposit: | 26 January 2022 | |||||||||
| Date of first compliant Open Access: | 26 January 2022 | |||||||||
| RIOXX Funder/Project Grant: |
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