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Impact of temperature and switching rate on properties of crosstalk on symmetrical & asymmetrical double-trench SiC power MOSFET
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Yang, Juefei, Jahdi, Saeed, Stark, Bernard, Wu, Ruizhu, Alatise, Olayiwola M. and Ortiz Gonzalez, Jose Angel (2021) Impact of temperature and switching rate on properties of crosstalk on symmetrical & asymmetrical double-trench SiC power MOSFET. In: IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, Toronto, ON, Canada, 13-16 Oct 2021 ISBN 9781665435543. doi:10.1109/IECON48115.2021.9589773 ISSN 2577-1647.
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WRAP-impact-temperature-switching-rate-properties-crosstalk-symmetrical-asymmetrical-double-trench-SiC-power-MOSFET-2021.pdf - Accepted Version - Requires a PDF viewer. Download (2067Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/IECON48115.2021.9589773
Abstract
In this paper, the properties of crosstalk on SiC planar MOSFET, SiC symmetrical double-trench MOSFET and SiC asymmetrical double-trench MOSFET is investigated on a half-bridge topology, to enable analysis of the impact of temperature, drain-source transition speed and gate resistance on the severity of the shoot-through current and induced gate voltage. The experimental measurements, performed on a wide range of temperatures and switching rates, show that the two selected symmetrical and asymmetrical double-trench MOSFETs exhibit higher induced gate voltage during crosstalk with the same external gate resistance compared with the planar SiC MOSFET, yielding a higher shoot-through current. Therefore, in continuous initiation of intentional crosstalk, the two double-trench MOSFETs experience more temperature rise, especially for symmetrical one which leads the device to verge of failure within minutes while the temperature rise in other two devices is significantly lower. The different trends of shoot-through current with temperature on DUTs reveals that they are dominated by different mechanisms, i.e., influenced by threshold voltage and inversion layer carriers’ mobility. A model is developed for prediction of shoot-through current during crosstalk which is validated for the 3 device structures. The comparison of the modelled results with the measurement proves its capability to predict the crosstalk behaviour.
Item Type: | Conference Item (Paper) | ||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors , Silicon carbide -- Electric properties , Semiconductors -- Thermal properties, Crosstalk | ||||||
Publisher: | IEEE | ||||||
ISBN: | 9781665435543 | ||||||
ISSN: | 2577-1647 | ||||||
Book Title: | IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society | ||||||
Official Date: | 13 November 2021 | ||||||
Dates: |
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DOI: | 10.1109/IECON48115.2021.9589773 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Reuse Statement (publisher, data, author rights): | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 24 January 2022 | ||||||
Date of first compliant Open Access: | 24 January 2022 | ||||||
RIOXX Funder/Project Grant: |
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Conference Paper Type: | Paper | ||||||
Title of Event: | IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society | ||||||
Type of Event: | Conference | ||||||
Location of Event: | Toronto, ON, Canada | ||||||
Date(s) of Event: | 13-16 Oct 2021 |
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