Structural and optical characterisation of undoped Si-Si0.78Ge0.22/Si(001) superlattices grown by MBE
UNSPECIFIED (1997) Structural and optical characterisation of undoped Si-Si0.78Ge0.22/Si(001) superlattices grown by MBE. In: Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96), WARSAW, POLAND, OCT 21-25, 1996. Published in: THIN SOLID FILMS, 306 (2). pp. 307-312.Full text not available from this repository.
We report the results of structural characterisation of five-period Si-Si1-xGex/Si(001), (x = 0.22) strained-layer superlattices (SL) by SIMS with an ultra-low energy (500 eV) O-2(+) primary beam and by 1.0 MeV He-4(+) RBS together with optical and Raman spectroscopies. The SLs were grown by solid source MBE in a VG Semicon V90S machine at five different substrate temperatures in the range 550 degrees C < T-s < 810 degrees C, which corresponds to the 'equilibrium regime' of Ge segregation near the Si/SiGe interface. The results obtained give information on material and interface quality, layer thicknesses, and state of the strain in the heterostructure. A good agreement is shown between all characterisation methods used. (C) 1997 Elsevier Science S.A.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||THIN SOLID FILMS|
|Publisher:||ELSEVIER SCIENCE SA|
|Date:||11 September 1997|
|Number of Pages:||6|
|Page Range:||pp. 307-312|
|Title of Event:||Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96)|
|Location of Event:||WARSAW, POLAND|
|Date(s) of Event:||OCT 21-25, 1996|
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