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Structural and optical characterisation of undoped Si-Si0.78Ge0.22/Si(001) superlattices grown by MBE
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UNSPECIFIED (1997) Structural and optical characterisation of undoped Si-Si0.78Ge0.22/Si(001) superlattices grown by MBE. In: Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96), OCT 21-25, 1996, WARSAW, POLAND.
Full text not available from this repository.Abstract
We report the results of structural characterisation of five-period Si-Si1-xGex/Si(001), (x = 0.22) strained-layer superlattices (SL) by SIMS with an ultra-low energy (500 eV) O-2(+) primary beam and by 1.0 MeV He-4(+) RBS together with optical and Raman spectroscopies. The SLs were grown by solid source MBE in a VG Semicon V90S machine at five different substrate temperatures in the range 550 degrees C < T-s < 810 degrees C, which corresponds to the 'equilibrium regime' of Ge segregation near the Si/SiGe interface. The results obtained give information on material and interface quality, layer thicknesses, and state of the strain in the heterostructure. A good agreement is shown between all characterisation methods used. (C) 1997 Elsevier Science S.A.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | THIN SOLID FILMS |
| Publisher: | ELSEVIER SCIENCE SA |
| ISSN: | 0040-6090 |
| Date: | 11 September 1997 |
| Volume: | 306 |
| Number: | 2 |
| Number of Pages: | 6 |
| Page Range: | pp. 307-312 |
| Publication Status: | Published |
| Title of Event: | Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96) |
| Location of Event: | WARSAW, POLAND |
| Date(s) of Event: | OCT 21-25, 1996 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/16147 |
Data sourced from Thomson Reuters' Web of Knowledge
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