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Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for p-channel field-effect transistors
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UNSPECIFIED (1997) Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for p-channel field-effect transistors. In: Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96), WARSAW, POLAND, OCT 21-25, 1996. Published in: THIN SOLID FILMS, 306 (2). pp. 338-345. ISSN 0040-6090.
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Abstract
A review of some important parameters relating to the performance of pseudomorphic Si/SiGe/Si p-channel MOS field-effect transistors is given. The problems of Ge matrix element and B and Sb dopant segregation, in growing suitable layer structures to optimise device performance, are discussed and some appropriate growth strategies are indicated. (C) 1997 Elsevier Science S.A.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | THIN SOLID FILMS | ||||
Publisher: | ELSEVIER SCIENCE SA | ||||
ISSN: | 0040-6090 | ||||
Official Date: | 11 September 1997 | ||||
Dates: |
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Volume: | 306 | ||||
Number: | 2 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 338-345 | ||||
Publication Status: | Published | ||||
Title of Event: | Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96) | ||||
Location of Event: | WARSAW, POLAND | ||||
Date(s) of Event: | OCT 21-25, 1996 |
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