UNSPECIFIED (1997) Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for p-channel field-effect transistors. In: Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96), OCT 21-25, 1996, WARSAW, POLAND.

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Abstract

A review of some important parameters relating to the performance of pseudomorphic Si/SiGe/Si p-channel MOS field-effect transistors is given. The problems of Ge matrix element and B and Sb dopant segregation, in growing suitable layer structures to optimise device performance, are discussed and some appropriate growth strategies are indicated. (C) 1997 Elsevier Science S.A.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	THIN SOLID FILMS
Publisher:	ELSEVIER SCIENCE SA
ISSN:	0040-6090
Date:	11 September 1997
Volume:	306
Number:	2
Number of Pages:	8
Page Range:	pp. 338-345
Publication Status:	Published
Title of Event:	Workshop on Molecular Beam Expitaxy-Growth Physics and Technology (MBE-GPT 96)
Location of Event:	WARSAW, POLAND
Date(s) of Event:	OCT 21-25, 1996
URI:	http://wrap.warwick.ac.uk/id/eprint/16148

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