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R : ULTRARAM : a low‐energy, high‐endurance, compound‐semiconductor memory on silicon
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Hodgson, Peter D., Lane, Dominic, Carrington, Peter J., Delli, Evangelia, Beanland, Richard and Hayne, Manus (2022) R : ULTRARAM : a low‐energy, high‐endurance, compound‐semiconductor memory on silicon. Advanced Electronic Materials . p. 2101103. doi:10.1002/aelm.202101103
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WRAP-ULTRARAM-Low-energy-high-endurance-compound-semiconductor-memory-silicon-2022.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1591Kb) | Preview |
Official URL: https://doi.org/10.1002/aelm.202101103
Abstract
ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storage in a floating gate accessed through a triple‐barrier resonant tunneling heterostructure. Here its implementation is reported on a Si substrate; a vital step toward cost‐effective mass production. Sample growth using molecular beam epitaxy commences with deposition of an AlSb nucleation layer to seed the growth of a GaSb buffer layer, followed by the III–V memory epilayers. Fabricated single‐cell memories show clear 0/1 logic‐state contrast after ≤10 ms duration program/erase pulses of ≈2.5 V, a remarkably fast switching speed for 10 and 20 µm devices. Furthermore, the combination of low voltage and small device capacitance per unit area results in a switching energy that is orders of magnitude lower than dynamic random access memory and flash, for a given cell size. Extended testing of devices reveals retention in excess of 1000 years and degradation‐free endurance of over 107 program/erase cycles, surpassing very recent results for similar devices on GaAs substrates.
| Item Type: | Journal Article | ||||||
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| Divisions: | Faculty of Science > Physics | ||||||
| SWORD Depositor: | Library Publications Router | ||||||
| Journal or Publication Title: | Advanced Electronic Materials | ||||||
| Publisher: | Wiley-Blackwell Publishing Ltd. | ||||||
| ISSN: | 2199-160X | ||||||
| Official Date: | 5 January 2022 | ||||||
| Dates: |
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| Page Range: | p. 2101103 | ||||||
| DOI: | 10.1002/aelm.202101103 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Open Access | ||||||
| Copyright Holders: | © 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH | ||||||
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