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R : ULTRARAM : a low‐energy, high‐endurance, compound‐semiconductor memory on silicon

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Hodgson, Peter D., Lane, Dominic, Carrington, Peter J., Delli, Evangelia, Beanland, Richard and Hayne, Manus (2022) R : ULTRARAM : a low‐energy, high‐endurance, compound‐semiconductor memory on silicon. Advanced Electronic Materials . p. 2101103. doi:10.1002/aelm.202101103 ISSN 2199-160X.

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Official URL: https://doi.org/10.1002/aelm.202101103

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Abstract

ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storage in a floating gate accessed through a triple‐barrier resonant tunneling heterostructure. Here its implementation is reported on a Si substrate; a vital step toward cost‐effective mass production. Sample growth using molecular beam epitaxy commences with deposition of an AlSb nucleation layer to seed the growth of a GaSb buffer layer, followed by the III–V memory epilayers. Fabricated single‐cell memories show clear 0/1 logic‐state contrast after ≤10 ms duration program/erase pulses of ≈2.5 V, a remarkably fast switching speed for 10 and 20 µm devices. Furthermore, the combination of low voltage and small device capacitance per unit area results in a switching energy that is orders of magnitude lower than dynamic random access memory and flash, for a given cell size. Extended testing of devices reveals retention in excess of 1000 years and degradation‐free endurance of over 107 program/erase cycles, surpassing very recent results for similar devices on GaAs substrates.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
SWORD Depositor: Library Publications Router
Journal or Publication Title: Advanced Electronic Materials
Publisher: Wiley-Blackwell Publishing Ltd.
ISSN: 2199-160X
Official Date: 5 January 2022
Dates:
DateEvent
5 January 2022Published
25 November 2021Accepted
Page Range: p. 2101103
DOI: 10.1002/aelm.202101103
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Copyright Holders: © 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH
Date of first compliant deposit: 27 January 2022
Date of first compliant Open Access: 27 January 2022
Related URLs:
  • http://creativecommons.org/licenses/by/4...

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