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Lateral n–i–p junction characterization using laser microscopy
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Muscat, S, Nash, G R, Hall, Ralph, Smith, S J, Bartlett, C J, Nash, K J, Jefferson, J H, Buckle, L, Emeny, M T and Ashley, T (2005) Lateral n–i–p junction characterization using laser microscopy. Semiconductor Science and Technology, 20 (5). pp. 406-411. doi:10.1088/0268-1242/20/5/014
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Official URL: http://dx.doi.org/10.1088/0268-1242/20/5/014
Abstract
Scanning laser microscopy was used to characterize a lateral n–i–p junction formed in an InSb quantum well. Two-dimensional scans of photocurrent, measured at 77 K under illumination from either a 633 nm or 3.4 µm laser beam, showed a peak in the signal amplitude, confirming the existence of a junction close to the design position. The spatial extent of the peak amplitude signal was different with the different illumination, suggesting that the junction is located within the InSb quantum well.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||||
| ISSN: | 0268-1242 | ||||||
| Official Date: | May 2005 | ||||||
| Dates: |
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| Volume: | 20 | ||||||
| Number: | 5 | ||||||
| Page Range: | pp. 406-411 | ||||||
| DOI: | 10.1088/0268-1242/20/5/014 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access |
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