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Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes
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Andresen, Bjorn F., Hall, Ralph, Fulop, Gabor F., Gordon, Neil T., Giess, Jean, Hails, Janet E., Graham, Andrew, Herbert, David C., Hall, David J., Southern, Paul, Cairns, John W., Lees, David J. and Ashley, Timothy (2005) Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes. In: Defense and Security, Orlando, United States, 28 Mar - 1 Apr 2005. Published in: Infrared Technology and Applications XXXI, 5783 ISSN 0277-786X. doi:10.1117/12.603386
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Official URL: http://dx.doi.org/10.1117/12.603386
Abstract
Infrared avalanche diodes are key components in diverse applications such as eye-safe burst illumination imaging systems and quantum cryptography systems operating at telecommunications fiber wavelengths. HgCdTe is a mature infrared detector material tunable over all infrared wavelengths longer than ~850nm. HgCdTe has fundamental properties conducive to producing excellent detectors with low noise gain. The huge asymmetry between the conduction and valence bands in HgCdTe is a necessary starting point for producing impact ionization with low excess noise factor. Other factors in the band structure are also favorable. The low bandgap necessitates at least multi-stage thermoelectric cooling. Mesa diode structures with electron initiated multiplication have been designed for gains of up to around 100 at temperatures at or above 80K. Backside illuminated, flip-chip, test diode arrays have been fabricated by MOVPE using a process identical to that required for producing large imaging arrays. Test diode results have been obtained with the following parameters characterized, dark current vs. voltage and temperature, gain vs. voltage, and spectral response as a function of wavelength and bias. The effect of changing active region cadmium composition and active region doping is presented along with an assessment of some of the trade-offs between dark leakage current, gain, operating voltage and temperature of operation.
| Item Type: | Conference Item (Paper) | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Infrared Technology and Applications XXXI | ||||
| Publisher: | SPIE | ||||
| ISSN: | 0277-786X | ||||
| Book Title: | Infrared Technology and Applications XXXI | ||||
| Official Date: | 31 May 2005 | ||||
| Dates: |
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| Volume: | 5783 | ||||
| DOI: | 10.1117/12.603386 | ||||
| Status: | Not Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | Defense and Security | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Orlando, United States | ||||
| Date(s) of Event: | 28 Mar - 1 Apr 2005 |
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