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Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes
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Stewart, A G, Cherkaoui, K, Hall, Ralph and Crowder, J G (2004) Deep level transient spectroscopy measurements on heterostructure InSb/InAlSb diodes. Semiconductor Science and Technology, 19 (3). pp. 468-471. doi:10.1088/0268-1242/19/3/031
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Official URL: http://dx.doi.org/10.1088/0268-1242/19/3/031
Abstract
Deep level transient spectroscopy (DLTS) measurements have been conducted on MBE-grown heterostructure InSb/In1−xAlxSb diodes. The measurements were conducted in the temperature range 10–130 K and two majority carrier (electron) traps, labelled E1 and E2, have been observed. A trap signature has been produced from the DLTS spectra for both traps. The activation energies determined from Arrhenius plots of the peak temperatures as a function of rate window for E1 and E2 were 17 meV and 79 meV, respectively. The apparent capture cross-sections and concentrations for E1 and E2 have also been measured.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||
| ISSN: | 0268-1242 | ||||
| Official Date: | 13 January 2004 | ||||
| Dates: |
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| Volume: | 19 | ||||
| Number: | 3 | ||||
| Page Range: | pp. 468-471 | ||||
| DOI: | 10.1088/0268-1242/19/3/031 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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