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High-performance long-wavelength HgCdTe infrared detectors grownon silicon substrates
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Hall, D. J., Buckle, L., Gordon, N. T., Giess, J., Hails, J. E., Cairns, J. W., Lawrence, R. M., Graham, A., Hall, Ralph, Maltby, C. and Ashley, T. (2004) High-performance long-wavelength HgCdTe infrared detectors grownon silicon substrates. Applied Physics Letters, 85 (11). pp. 2113-2115. doi:10.1063/1.1791740
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Official URL: http://dx.doi.org/10.1063/1.1791740
Abstract
Long-wavelength HgCdTe heterostructures on silicon (100) substrates have been grown using metal-organic vapor phase epitaxy. Test diodes have been fabricated from this material using mesa technology and flip-chip bonding. We have demonstrated excellent resistance-area product characteristics for diodes with a 10.2μm cutoff wavelength. R0A values approaching 103Ωcm2 at 80K have been measured and the resistance-area product maintained above 102Ωcm2 at 1V reverse bias. Variable temperature R0A values correspond to expected generation-recombination loss mechanisms between 60 and 120K. Current-voltage characteristics of two diodes at opposite sides of an array indicate that a very uniform imaging long-wavelength infrared array could be fabricated from this material.
| Item Type: | Journal Article | ||||||||
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| Divisions: | Faculty of Science > Physics | ||||||||
| Journal or Publication Title: | Applied Physics Letters | ||||||||
| Publisher: | American Institute of Physics | ||||||||
| ISSN: | 0003-6951 | ||||||||
| Official Date: | September 2004 | ||||||||
| Dates: |
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| Volume: | 85 | ||||||||
| Number: | 11 | ||||||||
| Page Range: | pp. 2113-2115 | ||||||||
| DOI: | 10.1063/1.1791740 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access |
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