Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates

Tools
- Tools
+ Tools

Andresen, Bjorn F., Hall, David J., Fulop, Gabor F., Buckle, Louise, Gordon, Neil T., Giess, Jean, Hails, Janet E., Cairns, John W., Lawrence, Rebecca M., Graham, Andrew, Hall, Ralph, Maltby, Corinne and Ashley, Tim (2004) Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates. In: Defense and Security, Orlando, United States, 12-16 Apr 2004. Published in: Infrared Technology and Applications XXX, 5406 ISSN 0277-786X. doi:10.1117/12.545003

Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1117/12.545003

Request Changes to record.

Abstract

We have demonstrated the successful growth of mercury cadmium telluride (MCT) infrared detector material on silicon substrates. Growth on silicon increases the maximum achievable array size, reduces manufacturing costs, and paves the way for infrared detector growth directly on multiplexing circuits. In addition, the thermal match with multiplexing circuits eliminates the requirement for complex thinning procedures. Since the crystal lattice of MCT is not matched to that of silicon, an intermediate buffer layer is required. We have developed a buffer layer technique that is compatible with MCT grown by Metal Organic Vapour Phase Epitaxy (MOVPE). Long-wavelength heterostructure device designs were grown using this technique. Test devices and 128x128 focal plane arrays were fabricated by wet etching mesa structures and passivating the mesa side-walls with a thin layer of CdTe. An indium flip-chip technique was used to form interconnects between the detector material and test or multiplexing circuit. At 77K, 50x50μm test devices with a 10.2μm cut off wavelength have been measured with R0A~1x103Ohm cm2 at zero bias and R.A~1x104Ohm cm2 at 0.1V reverse bias. Arrays from this material have been demonstrated with operabilities up to 99.7%.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science > Physics
Journal or Publication Title: Infrared Technology and Applications XXX
Publisher: SPIE
ISSN: 0277-786X
Book Title: Infrared Technology and Applications XXX
Official Date: August 2004
Dates:
DateEvent
August 2004Published
Volume: 5406
DOI: 10.1117/12.545003
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: Defense and Security
Type of Event: Conference
Location of Event: Orlando, United States
Date(s) of Event: 12-16 Apr 2004

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us