The Library
Reverse breakdown in long wavelength lateral collection CdxHg1−xTe diodes
Tools
Tools
Tools
Elliott, C. T., Gordon, N. T., Hall, Ralph and Crimes, G. (1990) Reverse breakdown in long wavelength lateral collection CdxHg1−xTe diodes. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 8 (2). pp. 1251-1253. doi:10.1116/1.576954
Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1116/1.576954
Abstract
Long wavelength diodes in CdxHg1−xTe show large deviations from ideality in their reverse characteristics. The excess currents are attributed in many published papers on band to band tunneling at high reverse bias and to trap assisted tunneling at low reverse bias. Measurements of photocurrent multiplication, current–voltage characteristics, and noise have been made on long wavelength loophole diodes to determine the breakdown mechanism. This has produced strong evidence that the reverse characteristics of good quality diodes of this type are limited by impact ionization. At higher biases, there is evidence of an additional breakdown mechanism, probably tunneling.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||||
| Journal or Publication Title: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | ||||||
| Publisher: | American Institute of Physics | ||||||
| ISSN: | 0734-2101 | ||||||
| Official Date: | March 1990 | ||||||
| Dates: |
|
||||||
| Volume: | 8 | ||||||
| Number: | 2 | ||||||
| Page Range: | pp. 1251-1253 | ||||||
| DOI: | 10.1116/1.576954 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
