UNSPECIFIED (1997) Thermoelectric and hot-electron properties of a silicon inversion layer. PHYSICAL REVIEW B, 56 (19). pp. 12422-12428. ISSN 0163-1829

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Abstract

Electron-phonon coupling of a two-dimensional electron gas in a Si metal-oxide-semiconductor field-effect transistor in the temperature range 0.3 K < T < 4 K has been investigated using phonon-drag thermopower S-g and electron energy loss rate F(T). At low temperatures (the Bloch limit) we find S-g proportional to T-6, as expected for electron-phonon scattering mediated by a screened deformation potential, and the magnitude is in excellent agreement with a calculation using no adjustable parameters; the calculation continues to give good agreement at higher temperatures. F(T) has been calculated using the same input parameters as for S-g. Reasonably good agreement is found with the observed values for T>1.5 K, but at lower temperatures the measured F(T) is much larger than predicted and also exhibits a much weaker temperature dependence. Possible reasons are suggested.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	PHYSICAL REVIEW B
Publisher:	AMERICAN PHYSICAL SOC
ISSN:	0163-1829
Date:	15 November 1997
Volume:	56
Number:	19
Number of Pages:	7
Page Range:	pp. 12422-12428
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/16223

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