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Dynamic dv/dt control strategy of SiC MOSFET for switching loss reduction in the operational power range
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Wu, Zebing, Jiang, Huaping, Zheng, Zhenhong, Qi, Xiaowei, Mao, Hua, Liu, Li and Ran, Li (2022) Dynamic dv/dt control strategy of SiC MOSFET for switching loss reduction in the operational power range. IEEE Transactions on Power Electronics, 37 (6). pp. 6237-6241. doi:10.1109/TPEL.2021.3137825 ISSN 0885-8993.
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Official URL: http://dx.doi.org/10.1109/TPEL.2021.3137825
Abstract
For silicon carbide power MOSFETs, high dv/dt in switching may bring about a high level of electro-magnetic interference. This paper shows that the dv/dt rate decreases at lower load currents. A dynamic dv/dt control strategy is then proposed for switching loss reduction in the whole operating range, by maintaining the dv/dt at the maximum acceptable level. The effectiveness of the proposed control strategy is verified by experiment, showing that the total switching loss can be reduced by as much as 22% at 30% load. Furthermore, simulation shows that a power loss reduction of 11.4% can be obtained for an electric vehicle converter which typically operates at light loads for most of the time.
Item Type: | Journal Article | ||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||
Publisher: | IEEE | ||||||
ISSN: | 0885-8993 | ||||||
Official Date: | June 2022 | ||||||
Dates: |
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Volume: | 37 | ||||||
Number: | 6 | ||||||
Page Range: | pp. 6237-6241 | ||||||
DOI: | 10.1109/TPEL.2021.3137825 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
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