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Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC Cascode devices : a technology evaluation
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Gunaydin, Y., Jahdi, Saeed, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Hedayati, M., Stark, B., Yang, J., Yuan, X. and Mellor, P. (2021) Impact of temperature and switching rate on forward and reverse conduction of GaN and SiC Cascode devices : a technology evaluation. In: The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020), 15-17 Dec 2020 pp. 782-787. doi:10.1049/icp.2021.1067
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WRAP-impact-temperature-switching-rate-forward-reverse-conduction-GaN-SiC-Cascode-devices-2021.pdf - Accepted Version - Requires a PDF viewer. Download (3980Kb) | Preview |
Official URL: http://dx.doi.org/10.1049/icp.2021.1067
Abstract
This paper provides the first comprehensive study on the forward and reverse conduction and reliability performance of the Gallium Nitride (GaN) and Silicon Carbide (SiC) power cascode devices, in comparison with standard silicon & SiC power MOSFETs and the silicon superjunction MOSFETs. The impact of temperature and the external gate resistance are investigated, and a practical yet accurate analytical model has been developed to calculate the switching rate of cascode devices. The 3 rd quadrant operation devices through the body diodes is also studied along with unclamped switching properties for avalanche breakdown limits of GaN and SiC cascodes.
Item Type: | Conference Item (Paper) | ||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Gallium nitride -- Thermal properties , Silicon carbide -- Thermal properties , Metal oxide semiconductor field-effect transistors , Wide gap semiconductors , Semiconductor switches | ||||||
Publisher: | IET | ||||||
Book Title: | The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020) | ||||||
Official Date: | 22 September 2021 | ||||||
Dates: |
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Page Range: | pp. 782-787 | ||||||
DOI: | 10.1049/icp.2021.1067 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Reuse Statement (publisher, data, author rights): | © PEMD 2020. All right reserved. Publisher: IET | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 14 February 2022 | ||||||
Date of first compliant Open Access: | 18 February 2022 | ||||||
RIOXX Funder/Project Grant: |
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Conference Paper Type: | Paper | ||||||
Title of Event: | The 10th International Conference on Power Electronics, Machines and Drives (PEMD 2020) | ||||||
Type of Event: | Conference | ||||||
Date(s) of Event: | 15-17 Dec 2020 | ||||||
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