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Dual-ferroelectric-coupling-engineered two-dimensional transistors for multifunctional in-memory computing
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Luo, Zheng-Dong, Zhang, Siqing, Liu, Yan, Zhang, Dawei, Gan, Xuetao, Seidel, Jan, Liu, Yang, Han, Genquan, Alexe, Marin and Hao, Yue (2022) Dual-ferroelectric-coupling-engineered two-dimensional transistors for multifunctional in-memory computing. ACS Nano, 16 (2). pp. 3362-3372. doi:10.1021/acsnano.2c00079 ISSN 1936-0851.
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Official URL: http://dx.doi.org/10.1021/acsnano.2c00079
Abstract
In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce the energy and time consumption for data-intensive computation. With the increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory computing hardware would require a different platform to deliver significantly enhanced functionalities at the material and device level. Here, we explore a dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces. Through diversifying the electrostatic behaviors in 2D transistors with the dual-ferroelectric-coupling effect, rich logic functionalities including linear (AND, OR) and nonlinear (XNOR) gates were obtained in unipolar (MoS2) and ambipolar (MoTe2) FeFETs. Combining both types of 2D FeFETs in a heterogeneous platform, an important computation circuit, i.e., a half-adder, was successfully constructed with an area-efficient two-transistor structure. Furthermore, with the same device structure, several key synaptic functions are shown at the device level, and an artificial neural network is simulated at the system level, manifesting its potential for neuromorphic computing. These findings highlight the prospects of dual-gate 2D FeFETs for the development of multifunctional in-memory computing hardware capable of both digital and analog computation.
Item Type: | Journal Article | |||||||||||||||||||||||||||||||||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | |||||||||||||||||||||||||||||||||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||||||||||||||||||||||||||||||||
Library of Congress Subject Headings (LCSH): | Field-effect transistors, Ferroelectricity, Computer storage devices, Nonvolatile random-access memory, Artificial intelligence | |||||||||||||||||||||||||||||||||||||||
Journal or Publication Title: | ACS Nano | |||||||||||||||||||||||||||||||||||||||
Publisher: | American Chemical Society | |||||||||||||||||||||||||||||||||||||||
ISSN: | 1936-0851 | |||||||||||||||||||||||||||||||||||||||
Official Date: | 22 February 2022 | |||||||||||||||||||||||||||||||||||||||
Dates: |
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Volume: | 16 | |||||||||||||||||||||||||||||||||||||||
Number: | 2 | |||||||||||||||||||||||||||||||||||||||
Page Range: | pp. 3362-3372 | |||||||||||||||||||||||||||||||||||||||
DOI: | 10.1021/acsnano.2c00079 | |||||||||||||||||||||||||||||||||||||||
Status: | Peer Reviewed | |||||||||||||||||||||||||||||||||||||||
Publication Status: | Published | |||||||||||||||||||||||||||||||||||||||
Reuse Statement (publisher, data, author rights): | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsnano.2c00079 | |||||||||||||||||||||||||||||||||||||||
Access rights to Published version: | Restricted or Subscription Access | |||||||||||||||||||||||||||||||||||||||
Date of first compliant deposit: | 16 February 2022 | |||||||||||||||||||||||||||||||||||||||
Date of first compliant Open Access: | 11 February 2023 | |||||||||||||||||||||||||||||||||||||||
RIOXX Funder/Project Grant: |
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