The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers
UNSPECIFIED. (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers. APPLIED PHYSICS LETTERS, 71 (17). pp. 2517-2519. ISSN 0003-6951Full text not available from this repository.
The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1-xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 mu m and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 mu m orthogonal misfit interactions occur and relaxation is dominated by the modified Frank-Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography. (C) 1997 American Institute of Physics. [S0003-6951(97)04443-4].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||27 October 1997|
|Number of Pages:||3|
|Page Range:||pp. 2517-2519|
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