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The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers
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UNSPECIFIED. (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers. APPLIED PHYSICS LETTERS, 71 (17). pp. 2517-2519. ISSN 0003-6951
Full text not available from this repository.Abstract
The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1-xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 mu m and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 mu m orthogonal misfit interactions occur and relaxation is dominated by the modified Frank-Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography. (C) 1997 American Institute of Physics. [S0003-6951(97)04443-4].
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Date: | 27 October 1997 |
| Volume: | 71 |
| Number: | 17 |
| Number of Pages: | 3 |
| Page Range: | pp. 2517-2519 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/16317 |
Data sourced from Thomson Reuters' Web of Knowledge
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