Screening phenomena in Si/Si1-xGex quantum wells
UNSPECIFIED. (1997) Screening phenomena in Si/Si1-xGex quantum wells. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 12 (10). pp. 1231-1234. ISSN 0268-1242Full text not available from this repository.
The electrical conductivity of the 2DHG formed at the Si/Si1-xGex interface has been measured on samples with composition 0.05 < x < 0.29 and carrier sheet densities between 1 x 10(11) cm(-2) and 1.1 x 10(12) cm(-2) in the temperature range 0.3 K to 1.6 K. It is found that the temperature (T) dependence is described by the superposition of a screening term linear in T and a logarithmic term associated with weak localization and carrier-carrier interactions. We find no evidence for a screening term with a T-2 dependence as has been predicted as a consequence of lifetime broadening. The results are in satisfactory quantitative agreement with Gold and Dolgopolov's theory of screening of short-range scattering centres.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Official Date:||October 1997|
|Number of Pages:||4|
|Page Range:||pp. 1231-1234|
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