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3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics
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Renz, Arne Benjamin, Vavasour, Oliver James, Shah, Vishal Ajit, Pathirana, Vasantha, Trajkovic, Tanya, Bonyadi, Yeganeh, Wu, Ruizhu, Ortiz-Gonzalez, Jose Angel , Rong, Xiaoyun, Baker, Guy, Mawby, Philip. A. and Gammon, Peter M. (2021) 3.3 kV SiC JBS diodes employing a P2O5 surface passivation treatment to improve electrical characteristics. In: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Vancouver, BC, Canada, 10-14 Oct 2021 pp. 5283-5288. doi:10.1109/ECCE47101.2021.9594999 ISSN 2329-3721.
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WRAP-3.3 kV-SiC-JBS-diodes-employing-P2O5-surface-passivation-treatment-improve-electrical-characteristics-Gammon-2021.pdf - Accepted Version - Requires a PDF viewer. Download (962Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/ECCE47101.2021.9594999
Abstract
3.3 kV Schottky barrier diodes and Junction Barrier Schottky diodes have been fabricated, employing a phosphorous pentoxide (P2O5) surface treatment prior to metal deposition in an attempt to further condition the power device’s interface. For SBD structures, the treatment consistently reduces the leakage current in molybdenum, tungsten and niobium SBDs, for the tungsten treatment by more than four orders of magnitude. X-ray photoelectron spectroscopy (XPS) analysis on the treated SBD interface revealed formation of a metal phosphate between P2O5 and the metal. When compared to an untreated sample, the P2O5 treatment has increased the valence band to fermi level offset by 0.2 eV to 3.25 eV, indicating that the treatment results in a degenerately n-doped SiC surface. When applied to fully optimised 3.3 kV JBS power structures utilizing a hybrid JTE design, P2O5 treatments improved blocking capabilities across the entire dataset by as much as 1,000 V
| Item Type: | Conference Item (Paper) | |||||||||
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| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Microelectronics , Silicon carbide -- Electric properties, Power semiconductors , Power electronics , Heat resistant alloys , Diodes, Semiconductor | |||||||||
| Publisher: | IEEE | |||||||||
| ISSN: | 2329-3721 | |||||||||
| Book Title: | 2021 IEEE Energy Conversion Congress and Exposition (ECCE) | |||||||||
| Official Date: | 16 November 2021 | |||||||||
| Dates: |
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| Page Range: | pp. 5283-5288 | |||||||||
| DOI: | 10.1109/ECCE47101.2021.9594999 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Reuse Statement (publisher, data, author rights): | © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| Date of first compliant deposit: | 18 March 2022 | |||||||||
| Date of first compliant Open Access: | 18 March 2022 | |||||||||
| RIOXX Funder/Project Grant: |
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| Conference Paper Type: | Paper | |||||||||
| Title of Event: | 2021 IEEE Energy Conversion Congress and Exposition (ECCE) | |||||||||
| Type of Event: | Conference | |||||||||
| Location of Event: | Vancouver, BC, Canada | |||||||||
| Date(s) of Event: | 10-14 Oct 2021 |
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