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A dv/dt control strategy of SiC MOSFET for turn-off loss reduction within entire operational power range
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Wu, Zebing, Jiang, Huaping, Qi, Xiaowei, Mao, Hua, Niu, Shuai, Zhong, Xiaohan, Tang, Lei and Ran, Li (2021) A dv/dt control strategy of SiC MOSFET for turn-off loss reduction within entire operational power range. In: 2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT), Qingdao, China, 2-4 Jul 2021. Published in: 2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT) pp. 424-428. doi:10.1109/ICEEMT52412.2021.9602461
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Official URL: http://dx.doi.org/10.1109/ICEEMT52412.2021.9602461
Abstract
Wide band gap (WBG) power devices have promising potential in various fields compared with Si devices. However, the high dv/dt of WBG power devices brings detrimental effects like electromagnetic interference (EMI). While the dv/dt of SiC MOSFET decreases when the load decline, simply suppressing the dv/dt of SiC MOSFET makes the dv/dt tolerance is not fully utilized. In this paper, a dv/dt control strategy for loss reduction is proposed. The basic idea is to minimize the turn-off switching loss by improving the dv/dt at part-load to the same tolerable dv/dt at full-load. The minimum switching loss can be achieved while satisfying the EMI tolerance. This paper verifies the effectiveness of the proposed dv/dt control strategy by simulation. A preliminary experiment is carried out to test the dv/dt envelope extraction. The proposed dv/dt control strategy can be a guideline for converters with certain dv/dt constraints.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | 2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT) | ||||
Publisher: | IEEE | ||||
Book Title: | 2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT) | ||||
Official Date: | 18 November 2021 | ||||
Dates: |
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Page Range: | pp. 424-428 | ||||
DOI: | 10.1109/ICEEMT52412.2021.9602461 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT) | ||||
Type of Event: | Conference | ||||
Location of Event: | Qingdao, China | ||||
Date(s) of Event: | 2-4 Jul 2021 |
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