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Optimization of 1700-V 4H-SiC semi-superjunction Schottky rectifiers with implanted P-pillars for practical realization
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Baker, G. W. C., Gammon, P. M., Renz, A. B., Vavasour, O., Chan, C. W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V. A., Mawby, P. A. (Philip A.) and Antoniou, M. (2022) Optimization of 1700-V 4H-SiC semi-superjunction Schottky rectifiers with implanted P-pillars for practical realization. IEEE Transactions on Electron Devices, 69 (4). pp. 1924-1930. doi:10.1109/TED.2022.3152460 ISSN 0018-9383.
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WRAP-Optimization-of-1700-V-4H-SiC-semi-superjunction-Schottky-rectifiers-with-implanted-P-pillars-Baker-2022.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (2093Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/TED.2022.3152460
Abstract
A class of vertical 1700 V 4H-silicon carbide (SiC) semi-superjunction (SJ) Schottky diodes have been simulated and optimized to ensure practical and cost-effective realization. The proposed structures could be realized using an n-type drift region of 9- μm and etching trenches partway through this region to form the required mesa regions. P-pillars are then created through implantation into both the trench sidewalls and trench bottom. This semi-SJ topology overcomes problems with conventional SJs that span the full drift region (full-SJs), namely a narrow charge-balance window required to achieve the maximum VBD , and hard, snappy, switching characteristics. The optimized SiC semi-SJ comprises a 7- μm SJ region above 2- μm of conventional drift region. An angled trench sidewall ( α ), 10° off vertical, introduces a graded charge profile throughout the n-pillar, which widens the implantation window by 34%, while maintaining a VBD of ~2.1 kV and a RON,SP comparable to a vertical full-SJ. Further advantages of the proposed semi-SJ, over a full-SJ, include a reduced trench aspect ratio and two orders of magnitude lower leakage current. Furthermore, the graded charge profile in the n-pillar gradually depletes the drift region, suppressing ringing and reducing the peak reverse recovery current by 50%.
| Item Type: | Journal Article | ||||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||
| Library of Congress Subject Headings (LCSH): | Diodes, Schottky-barrier, Silicon carbide, Diodes, Switching -- Silicon carbide | ||||||||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||||||
| Publisher: | IEEE | ||||||||||
| ISSN: | 0018-9383 | ||||||||||
| Official Date: | April 2022 | ||||||||||
| Dates: |
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| Volume: | 69 | ||||||||||
| Number: | 4 | ||||||||||
| Page Range: | pp. 1924-1930 | ||||||||||
| DOI: | 10.1109/TED.2022.3152460 | ||||||||||
| Status: | Peer Reviewed | ||||||||||
| Publication Status: | Published | ||||||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||||||
| Date of first compliant deposit: | 28 March 2022 | ||||||||||
| Date of first compliant Open Access: | 12 April 2022 | ||||||||||
| RIOXX Funder/Project Grant: |
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