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On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures
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UNSPECIFIED (1997) On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 12 (9). pp. 1064-1071. ISSN 0268-1242
Full text not available from this repository.Abstract
A detailed comparison is made between theory and experiment for the low-temperature mobility of holes in gated oxide, coherently strained Si/SiGe heterostructures. We conclude that the mobility is mainly limited by interface impurities, conventional surface roughness and strain fluctuations; by contrast, we argue that alloy scattering is comparatively weak. Comments regarding possible mobility degradation due to oxide formation are also made.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| Publisher: | IOP PUBLISHING LTD |
| ISSN: | 0268-1242 |
| Date: | September 1997 |
| Volume: | 12 |
| Number: | 9 |
| Number of Pages: | 8 |
| Page Range: | pp. 1064-1071 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/16433 |
Data sourced from Thomson Reuters' Web of Knowledge
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