On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures
UNSPECIFIED. (1997) On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 12 (9). pp. 1064-1071. ISSN 0268-1242Full text not available from this repository.
A detailed comparison is made between theory and experiment for the low-temperature mobility of holes in gated oxide, coherently strained Si/SiGe heterostructures. We conclude that the mobility is mainly limited by interface impurities, conventional surface roughness and strain fluctuations; by contrast, we argue that alloy scattering is comparatively weak. Comments regarding possible mobility degradation due to oxide formation are also made.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Official Date:||September 1997|
|Number of Pages:||8|
|Page Range:||pp. 1064-1071|
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