Gong, Chuncheng, He, Kuang, Chen, Qu, Robertson, Alex W. and Warner, Jamie H. (2016) In situ high temperature atomic level studies of large closed grain boundary loops in graphene. ACS Nano, 10 (10). pp. 9165-9173. doi:10.1021/acsnano.6b04959

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Abstract

We use an in situ heating holder within an aberration corrected transmission electron microscope (AC-TEM) to study the structure and dynamics of large closed grain boundary (GB) loops in graphene at the atomic level. Temperatures up to 800 °C are used to accelerate dynamic evolution of the defect clusters, increasing bond rotation and atomic addition/loss. Our results show that the large closed GB loops relax under electron beam irradiation into several isolated dislocations far apart from each other. Line defects composed of several adjacent excess-atom clusters can be found during the reconfiguration process. Dislocation ejection from the closed GB loops are seen in real time and are shown to help the reduction in loop size. These results show detailed information about the stability and behavior of large GB loops in 2D materials that have importance in the high temperature processing of these materials.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	ACS Nano
Publisher:	American Chemical Society
ISSN:	1936-0851
Official Date:	25 October 2016
Dates:	Date Event 25 October 2016 Published 23 September 2016 Available 19 September 2016 Accepted 24 July 2016 Submitted
Volume:	10
Number:	10
Page Range:	pp. 9165-9173
DOI:	10.1021/acsnano.6b04959
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Copyright Holders:	American Chemical Society
Related URLs:	Other Repository

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