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Atomic level distributed strain within graphene divacancies from bond rotations
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Chen, Qu, Robertson, Alex W., He, Kuang, Gong, Chuncheng, Yoon, Euijoon, Lee, Gun-Do and Warner, Jamie H. (2015) Atomic level distributed strain within graphene divacancies from bond rotations. ACS Nano, 9 (8). pp. 8599-8608. doi:10.1021/acsnano.5b03801 ISSN 1936-0851.
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Official URL: http://dx.doi.org/10.1021/acsnano.5b03801
Abstract
Vacancy defects play an important role in influencing the properties of graphene, and understanding their detailed atomic structure is crucial for developing accurate models to predict their impact. Divacancies (DVs) are one of the most common defects in graphene and can take three different structural forms through various sequences of bond rotations to minimize the energy. Using aberration-corrected transmission electron microscopy with monochromation of the electron source, we resolve the position of C atoms in graphene and measure the CāC bond lengths within the three DVs, enabling a map of bond strain to be generated. We show that bond rotations reduce the maximum single bond strain reached within a DV and help distribute the strain over a larger number of bonds to minimize the peak magnitude.
Item Type: | Journal Article | ||||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||
Journal or Publication Title: | ACS Nano | ||||||||||
Publisher: | American Chemical Society | ||||||||||
ISSN: | 1936-0851 | ||||||||||
Official Date: | 25 August 2015 | ||||||||||
Dates: |
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Volume: | 9 | ||||||||||
Number: | 8 | ||||||||||
Page Range: | pp. 8599-8608 | ||||||||||
DOI: | 10.1021/acsnano.5b03801 | ||||||||||
Status: | Peer Reviewed | ||||||||||
Publication Status: | Published | ||||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||||
Copyright Holders: | American Chemical Society | ||||||||||
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