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Partial dislocations in graphene and their atomic level migration dynamics
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Robertson, Alex W., Lee, Gun-Do, He, Kuang, Fan, Ye, Allen, Christopher S., Lee, Sungwoo, Kim, Heeyeon, Yoon, Euijoon, Zheng, Haimei, Kirkland, Angus I. and Warner, Jamie H. (2015) Partial dislocations in graphene and their atomic level migration dynamics. Nano Letters, 15 (9). pp. 5950-5955. doi:10.1021/acs.nanolett.5b02080
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Official URL: http://dx.doi.org/10.1021/acs.nanolett.5b02080
Abstract
We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable configuration to the perfect dislocation. Low-energy migration paths mediated by partial dislocation formation have been observed, providing insights into the atomistic dynamics of graphene during annealing. These results are important for understanding the high temperature plasticity of graphene and partial dislocation behavior in related crystal systems, such as diamond cubic materials.
Item Type: | Journal Item | ||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Journal or Publication Title: | Nano Letters | ||||||||
Publisher: | American Chemical Society | ||||||||
ISSN: | 1530-6984 | ||||||||
Official Date: | 9 September 2015 | ||||||||
Dates: |
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Volume: | 15 | ||||||||
Number: | 9 | ||||||||
Page Range: | pp. 5950-5955 | ||||||||
DOI: | 10.1021/acs.nanolett.5b02080 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Copyright Holders: | American Chemical Society | ||||||||
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