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A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer
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Myronov, Maksym, Colston, Gerard B., Davies, Jack and Michael, Laura (2022) A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer. Semiconductor Science and Technology, 37 (6). 065003. doi:10.1088/1361-6641/ac5f69 ISSN 1361-6641.
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Official URL: https://doi.org/10.1088/1361-6641/ac5f69
Abstract
Optical reflection spectroscopy techniques offer a non-destructive and fast method of measuring the thickness of silicon (Si) epilayers, enabling very fast thickness uniformity mapping across the full surface of epiwafers up to 450 mm in diameter. However, their use for undoped or low doped epilayers has traditionally been constrained by a dependence on high levels of substitutional doping in the Si wafer, at values of approximately 5 × 1019 cm−3. Whilst the high dopant concentration of this wafer creates the necessary reflectance boundary for optical reflection, their commercial availability is mainly limited to the (001) surface orientation only. Optical reflectance techniques are therefore also limited in use to this orientation. In this article, an approach to measure the thickness of a Si epilayer on any Si wafer, independent of its crystallographic orientation, doping type and value, using Fourier transform infrared reflection spectroscopy is proposed and demonstrated. Because the use of non-destructive optical reflection spectroscopy is already common and well-understood within both industry and academia, this technique could easily be implemented within existing industrial and research fabrication facilities. Furthermore, this approach could be adapted, with further work, to suit other semiconductor materials and other optical reflection techniques.
Item Type: | Journal Article | ||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TS Manufactures |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||
SWORD Depositor: | Library Publications Router | ||||||
Library of Congress Subject Headings (LCSH): | Silicon , Silicon -- Measurement, Epitaxy , Semiconductors -- Optical properties, Fourier transform infrared spectroscopy , Chemical vapor deposition , Reflectance | ||||||
Journal or Publication Title: | Semiconductor Science and Technology | ||||||
Publisher: | IOP Publishing | ||||||
ISSN: | 1361-6641 | ||||||
Official Date: | 20 April 2022 | ||||||
Dates: |
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Volume: | 37 | ||||||
Number: | 6 | ||||||
Article Number: | 065003 | ||||||
DOI: | 10.1088/1361-6641/ac5f69 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||
Date of first compliant deposit: | 17 May 2022 | ||||||
Date of first compliant Open Access: | 17 May 2022 | ||||||
RIOXX Funder/Project Grant: |
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