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Long-term stability and optoelectronic performance enhancement of InAsP nanowires with an ultrathin InP passivation layer

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Chen, LuLu, Adeyemo, Stephanie O., Fonseka, H. Aruni, Liu, Huiyun, Kar, Srabani, Yang, Hui, Velichko, Anton, Mowbray, David J., Cheng, Zhiyuan, Sánchez, Ana M., Joyce, Hannah J. and Zhang, Yunyan (2022) Long-term stability and optoelectronic performance enhancement of InAsP nanowires with an ultrathin InP passivation layer. Nano Letters, 22 (8). pp. 3433-3439. doi:10.1021/acs.nanolett.2c00805 ISSN 1530-6984.

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Official URL: http://dx.doi.org/10.1021/acs.nanolett.2c00805

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Abstract

The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but it is challenging to achieve long-term effective passivation without significantly affecting other qualities. Here, we demonstrate that an ultrathin InP passivation layer of 2–3 nm can effectively solve these challenges. For InAsP nanowires with small diameters of 30–40 nm, the ultrathin passivation layer reduces the surface recombination velocity by at least 70% and increases the charge carrier lifetime by a factor of 3. These improvements are maintained even after storing the samples in ambient atmosphere for over 3 years. This passivation also greatly improves the performance thermal tolerance of these thin NWs and extends their operating temperature from <150 K to room temperature. This study provides a new route toward high-performance room-temperature narrow-diameter NW devices with long-term stability.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Nanowires, Optoelectronic devices , Surface chemistry, Indium phosphide , Interfaces (Physical sciences)
Journal or Publication Title: Nano Letters
Publisher: American Chemical Society
ISSN: 1530-6984
Official Date: 27 April 2022
Dates:
DateEvent
27 April 2022Published
14 April 2022Available
25 March 2022Accepted
Volume: 22
Number: 8
Page Range: pp. 3433-3439
DOI: 10.1021/acs.nanolett.2c00805
Status: Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.2c00805
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 21 April 2022
Date of first compliant Open Access: 14 April 2023
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
UNSPECIFIEDLeverhulme Trusthttp://dx.doi.org/10.13039/501100000275
EP/P000916/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/P006973/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/P000886/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
716471 (ACrossWire)European Research Councilhttp://dx.doi.org/10.13039/501100000781
National Epitaxy Facility[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
International Doctoral Studentship[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

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