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Contact effect on twisted graphene based Schottky transistor

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Ahmadi, Ramin and Ahmadi, Mohammad Taghi (2022) Contact effect on twisted graphene based Schottky transistor. ECS Journal of Solid State Science and Technology, 11 (3). 031005. doi:10.1149/2162-8777/ac5eb3 ISSN 2162-8769.

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Official URL: http://dx.doi.org/10.1149/2162-8777/ac5eb3

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Abstract

Owing to the exceptional electrical properties of different one dimensional (1D) classifications of graphene structure such as graphene nanoribbon (GNR) and twisted graphene (TWG) led to a revolution in nanoelectronic researche and applications. Thus, these materials have been extensively explored in nanoelectronics science and materials. This paper is focused on GNR and TWG junction as metal-semiconductor-metal (MSM) in the form of a transistor. The wave vectors of TWG and GNR based on the geometrical effects are discussed. By considering 1D potential barrier at the junction of TWG as a semiconducting region and GNR as a metallic region, the transmission probability is calculated. Then, the I–V characteristics of GNR-TWG Schottky transistor based on quantum tunneling effect arepresented and discussed, as well. The performance of GNR-TWG Schottky transistor under variation of gate-source voltage, channel length, number of twists, width of GNR, and temperature are investigated. It is concluded that increment in number of twists and width of GNR lead to increasing the drain current and threshold voltage. Finally, comparison study with graphene nanoscroll (GNS) Schottky transistor, trilayer graphene nanoribbon (TGNR) Schottky transistor, and reported experimental data are performed and results represent that GNR-TWG Schottky transistor has larger drain current than these works.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: ECS Journal of Solid State Science and Technology
Publisher: IOP Publishing
ISSN: 2162-8769
Official Date: 29 March 2022
Dates:
DateEvent
29 March 2022Published
20 February 2022Submitted
Volume: 11
Number: 3
Number of Pages: 6
Article Number: 031005
DOI: 10.1149/2162-8777/ac5eb3
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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