Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.

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Abstract

An investigation into the effect of deposition, growth and conditioning of the SiO2/SiC interface in MOS capacitors is performed, where the enhancement of reliability is characterised. Various methods of oxide formation are compared: ALD, LPCVD and thermally grown. ALD-deposited oxides were post-deposition annealed in nitrous oxide ambient, resulting in average flatband voltages of 0.63 V and low DIT levels, down to 7 x 1011 cm-2 eV-1 at EC-ET =0.2 eV. These samples also outperformed their counterparts in terms of high leakage and constant voltage TDDB performance, which was done at 175°C, averaging breakdown electric fields of 9.84 MV/cm and a 63% failure stress time of 11220 s when stressed at 8 MV/cm.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	ECS Transactions
Publisher:	Electrochemical Society, Inc.
ISSN:	1938-5862
Official Date:	2022
Dates:	Date Event 2022 Published
Volume:	108
Number:	2
Page Range:	pp. 43-49
DOI:	10.1149/10802.0043ecst
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Copyright Holders:	© 2022 ECS - The Electrochemical Society

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