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Sulfur passivation of InN surface electron accumulation

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Bailey, L. R. (Laura R.), Veal, T. D. (Tim D.), Kendrick, C. E., Durbin, S. M. and McConville, C. F. (Chris F.) (2009) Sulfur passivation of InN surface electron accumulation. Applied Physics Letters, Vol.95 (No.19). Article no. 192111. doi:10.1063/1.3263725

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Official URL: http://dx.doi.org/10.1063/1.3263725

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Abstract

The effects of treatment with ammonium sulfide ((NH4)(2)S-x) solution on the electronic properties of InN surfaces have been investigated with high resolution x-ray photoemission spectroscopy. The valence band, In 3d, and N 1s x-ray photoemission spectra show that the surface Fermi level decreases by approximately 0.15 eV with (NH4)(2)S-x-treatment. This corresponds to a reduction of the downward band bending, with the surface sheet charge density decreasing by 30%. (C) 2009 American Institute of Physics. [doi:10.1063/1.3263725]

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 9 November 2009
Dates:
DateEvent
9 November 2009Published
Volume: Vol.95
Number: No.19
Number of Pages: 3
Page Range: Article no. 192111
DOI: 10.1063/1.3263725
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/E031595/1 (EPSRC), EP/G004447/1 (EPSRC)

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