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Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates
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Henksmeier, T., Schulz, J. F., Kluth, E., Feneberg, M., Goldhahn, R., Sánchez, Ana M., Voigt, M., Grundmeier, G. and Reuter, D. (2022) Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates. Journal of Crystal Growth, 593 . 126756. doi:10.1016/j.jcrysgro.2022.126756 ISSN 0022-0248.
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WRAP-remote-epitaxy-InxGa1-xAs-(001)-on-graphene-covered-GaAs(001)-substrates-Sánchez-2022.pdf - Accepted Version - Requires a PDF viewer. Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0. Download (1567Kb) | Preview |
Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2022.126756
Abstract
The heteroepitaxial growth of lattice mismatched layers is crucial for modern semiconductor device fabrication, but it is a significant challenge in epitaxy. Growth of lattice mismatched materials creates strain in the epitaxial layer, which is usually relaxed by introducing crystal defects deteriorating the device performance. Remote epitaxy on graphene covered substrates was recently proposed to offer a different relaxation pathway for the strained films. Here, we report on the remote heteroepitaxy growth by molecular beam epitaxy (MBE) of InxGa1-xAs-layers (0 < x 0.5) on transfer graphene covered GaAs-(0 0 1) substrates. We show that a carefully optimized plasma treatment followed by ultra-high vacuum (UHV) annealing allows InxGa1-xAs remote epitaxy on transfer graphene covered GaAs substrates. Detailed investigations on the strain relaxation of 200 nm thick InxGa1-xAs-layers on graphene covered GaAs and for comparison on bare GaAs are presented. High-resolution X-ray-diffraction (HRXRD) and transmission electron microscopy (TEM) measurements reveal single crystalline growth on large areas. On bare GaAs we observe the well-known tilt of the InxGa1-xAs-layers whereas on graphene no tilt is observed. The layers grown on graphene are more relaxed than layers grown on bare GaAs and their strain relaxation is symmetric whereas on bare GaAs the strain relaxation is stronger along the [1 1 0] direction.
Item Type: | Journal Article | ||||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Library of Congress Subject Headings (LCSH): | Epitaxy, Molecular beam epitaxy, Graphene, Gallium arsenide semiconductors | ||||||||
Journal or Publication Title: | Journal of Crystal Growth | ||||||||
Publisher: | Elsevier BV, North-Holland | ||||||||
ISSN: | 0022-0248 | ||||||||
Official Date: | 1 September 2022 | ||||||||
Dates: |
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Volume: | 593 | ||||||||
Article Number: | 126756 | ||||||||
DOI: | 10.1016/j.jcrysgro.2022.126756 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 25 August 2022 | ||||||||
Date of first compliant Open Access: | 9 June 2023 | ||||||||
RIOXX Funder/Project Grant: |
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