Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

A novel route for the inclusion of metal dopants in silicon

Tools
- Tools
+ Tools

Gardener, Jules A., Liaw, Irving, Aeppli, Gabriel, Boyd, Ian W., Chater, Richard J., Jones, T. S. (Tim S.), McPhail, David S., Sankar, Gopinathan, Stoneham, A. Marshall, Sikora, Marcin, Thornton, Geoff and Heutz, Sandrine (2010) A novel route for the inclusion of metal dopants in silicon. Nanotechnology, Vol.21 (No.2). Article: 025304. doi:10.1088/0957-4484/21/2/025304

Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1088/0957-4484/21/2/025304

Request Changes to record.

Abstract

We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.

Item Type: Journal Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
T Technology
Q Science > QC Physics
Divisions: Faculty of Science > Chemistry
Journal or Publication Title: Nanotechnology
Publisher: Institute of Physics Publishing Ltd.
ISSN: 0957-4484
Official Date: 15 January 2010
Dates:
DateEvent
15 January 2010Published
Volume: Vol.21
Number: No.2
Number of Pages: 5
Page Range: Article: 025304
DOI: 10.1088/0957-4484/21/2/025304
Status: Peer Reviewed
Publication Status: Published
Funder: Research Councils UK (RCUK), Engineering and Physical Sciences Research Council (EPSRC)
Grant number: GR/S23506

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us