Gardener, Jules A., Liaw, Irving, Aeppli, Gabriel, Boyd, Ian W., Chater, Richard J., Jones, T. S. (Tim S.), McPhail, David S., Sankar, Gopinathan, Stoneham, A. Marshall, Sikora, Marcin, Thornton, Geoff and Heutz, Sandrine (2010) A novel route for the inclusion of metal dopants in silicon. Nanotechnology, Vol.21 (No.2). Article: 025304. doi:10.1088/0957-4484/21/2/025304

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Abstract

We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.

Item Type:	Journal Article
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) T Technology Q Science > QC Physics
Divisions:	Faculty of Science > Chemistry
Journal or Publication Title:	Nanotechnology
Publisher:	Institute of Physics Publishing Ltd.
ISSN:	0957-4484
Official Date:	15 January 2010
Dates:	Date Event 15 January 2010 Published
Volume:	Vol.21
Number:	No.2
Number of Pages:	5
Page Range:	Article: 025304
DOI:	10.1088/0957-4484/21/2/025304
Status:	Peer Reviewed
Publication Status:	Published
Funder:	Research Councils UK (RCUK), Engineering and Physical Sciences Research Council (EPSRC)
Grant number:	GR/S23506

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