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A novel route for the inclusion of metal dopants in silicon
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Gardener, Jules A., Liaw, Irving, Aeppli, Gabriel, Boyd, Ian W., Chater, Richard J., Jones, T. S. (Tim S.), McPhail, David S., Sankar, Gopinathan, Stoneham, A. Marshall, Sikora, Marcin, Thornton, Geoff and Heutz, Sandrine (2010) A novel route for the inclusion of metal dopants in silicon. Nanotechnology, Vol.21 (No.2). Article: 025304. doi:10.1088/0957-4484/21/2/025304
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Official URL: http://dx.doi.org/10.1088/0957-4484/21/2/025304
Abstract
We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology Q Science > QC Physics |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||
| Journal or Publication Title: | Nanotechnology | ||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||
| ISSN: | 0957-4484 | ||||
| Official Date: | 15 January 2010 | ||||
| Dates: |
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| Volume: | Vol.21 | ||||
| Number: | No.2 | ||||
| Number of Pages: | 5 | ||||
| Page Range: | Article: 025304 | ||||
| DOI: | 10.1088/0957-4484/21/2/025304 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | Research Councils UK (RCUK), Engineering and Physical Sciences Research Council (EPSRC) | ||||
| Grant number: | GR/S23506 |
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