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Data for Electronic characteristics of ultra-thin passivation layers for silicon photovoltaics
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Pain, Sophie, Khorani, Edris, Niewelt, Tim, Wratten, Ailish, Paez Fajardo, Galo J., Winfield, Ben, Bonilla, Ruy S., Walker, Marc, Piper, Louis F. J., Grant, Nicholas E. and Murphy, John D. (2022) Data for Electronic characteristics of ultra-thin passivation layers for silicon photovoltaics. [Dataset]
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Dataset for WRAP.xlsx - Published Version Available under License Creative Commons Attribution 4.0. Download (412Kb) |
Official URL: http://wrap.warwick.ac.uk/167970/
Abstract
Surface passivating thin films are crucial for limiting the electrical losses during charge carrier collection in silicon photovoltaic devices. Certain dielectric coatings of more than 10 nm provide excellent surface passivation, and ultra-thin (<2 nm) dielectric layers can serve as interlayers in passivating contacts. Here, ultra-thin passivating films of SiO2, Al2O3, and HfO2 are created via plasma-enhanced atomic layer deposition and annealing. It is found that thin negatively charged HfO2 layers exhibit excellent passivation properties—exceeding those of SiO2 and Al2O3—with 0.9 nm HfO2 annealed at 450 °C providing a surface recombination velocity of 18.6 cm s−1. The passivation quality is dependent on annealing temperature and layer thickness, and optimum passivation is achieved with HfO2 layers annealed at 450 °C measured to be 2.2–3.3 nm thick which give surface recombination velocities ≤2.5 cm s−1 and J0 values of ≈14 fA cm−2. The superior passivation quality of HfO2 nanolayers makes them a promising candidate for future passivating contacts in high-efficiency silicon solar cells.
Item Type: | Dataset | ||||||||||||||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||||||||
Library of Congress Subject Headings (LCSH): | Photovoltaic power generation, Silicon crystals, Interfaces (Physical sciences) | ||||||||||||||||||
Publisher: | University of Warwick, School of Engineering | ||||||||||||||||||
Official Date: | 9 August 2022 | ||||||||||||||||||
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Status: | Not Peer Reviewed | ||||||||||||||||||
Publication Status: | Published | ||||||||||||||||||
Media of Output (format): | .xlsx | ||||||||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||||||||
Copyright Holders: | University of Warwick | ||||||||||||||||||
Description: | The dataset (a single file in XLSX format) contains the data behind the figures in the paper and supporting information. Captions to the figures are given in the paper and supporting information. Abbreviations, variables and methods used are defined in the paper. |
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Date of first compliant deposit: | 9 August 2022 | ||||||||||||||||||
Date of first compliant Open Access: | 9 August 2022 | ||||||||||||||||||
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