Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A., 1973- and Mawby, P. A. (Philip A.). (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. ISSN 0021-8979

Preview

Text WRAP_Gammon_JoAP_Article_File.pdf - Accepted Version Download (543Kb) | Preview

Abstract

In this article Schottky barrier diodes comprising of a n-n germanium-silicon carbide (Ge-SiC) heterojunction are electrically characterized Circular transmission line measurements prove that the nickel front and back contacts are Ohmic, isolating the Ge/SiC heterojunction as the only contributor to the Schottky behavior Current-voltage plots taken at varying temperature (IVT) reveal that the ideality factor (n) and Schottky barrier height (SBH) (Phi) are temperature dependent and that incorrect values of file Richardson constant (A**) are being produced, suggesting tin inhomogeneous barrier Techniques originally designed for metal-semiconductor SBH extraction are applied to the heterojunction results to extract values of Phi and A** that are independent of temperature. The experimental IVT data are replicated using the Tung model It is proposed that small areas, or patches, making Lip Only 3% of the total contact area will dominate the I-V results due to their low SBH of 1.033 eV The experimental IVT data are also analyzed statistically using the extracted values of Phi to build Lip a Gaussian distribution of barrier heights. Including the standard deviation and a mean SBH of 1.126 eV, Which Should be analogous to file SBH extracted from capacitance-voltage (C-V) measurements. Both techniques yield accurate values of A** for SiC. However, the C-V analysis did not correlate with the mean SBH as expected. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3255976]

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Engineering Faculty of Science > Physics
Journal or Publication Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date:	1 November 2009
Volume:	Vol.106
Number:	No.9
Number of Pages:	7
Page Range:	Article no. 093708
Identification Number:	10.1063/1.3255976
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
URI:	http://wrap.warwick.ac.uk/id/eprint/16803

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item