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Analysis of inhomogeneous Ge/SiC heterojunction diodes
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Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, James A. and Mawby, P. A. (2009) Analysis of inhomogeneous Ge/SiC heterojunction diodes. Journal of Applied Physics, Vol.106 (No.9). Article no. 093708. doi:10.1063/1.3255976
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Official URL: http://dx.doi.org/10.1063/1.3255976
Abstract
In this article Schottky barrier diodes comprising of a n-n germanium-silicon carbide (Ge-SiC) heterojunction are electrically characterized Circular transmission line measurements prove that the nickel front and back contacts are Ohmic, isolating the Ge/SiC heterojunction as the only contributor to the Schottky behavior Current-voltage plots taken at varying temperature (IVT) reveal that the ideality factor (n) and Schottky barrier height (SBH) (Phi) are temperature dependent and that incorrect values of file Richardson constant (A**) are being produced, suggesting tin inhomogeneous barrier Techniques originally designed for metal-semiconductor SBH extraction are applied to the heterojunction results to extract values of Phi and A** that are independent of temperature. The experimental IVT data are replicated using the Tung model It is proposed that small areas, or patches, making Lip Only 3% of the total contact area will dominate the I-V results due to their low SBH of 1.033 eV The experimental IVT data are also analyzed statistically using the extracted values of Phi to build Lip a Gaussian distribution of barrier heights. Including the standard deviation and a mean SBH of 1.126 eV, Which Should be analogous to file SBH extracted from capacitance-voltage (C-V) measurements. Both techniques yield accurate values of A** for SiC. However, the C-V analysis did not correlate with the mean SBH as expected. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3255976]
| Item Type: | Journal Article | ||||
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| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 1 November 2009 | ||||
| Dates: |
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| Volume: | Vol.106 | ||||
| Number: | No.9 | ||||
| Number of Pages: | 7 | ||||
| Page Range: | Article no. 093708 | ||||
| DOI: | 10.1063/1.3255976 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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