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The improved reliability performance of post-deposition annealed ALD-SiO2
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Renz, A. B., Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, G. W. C., Grant, Nicholas E., Murphy, John D., Mawby, Philip A. and Shah, Vishal (2022) The improved reliability performance of post-deposition annealed ALD-SiO2. Materials Science Forum, 1062 . pp. 325-329. doi:10.4028/p-b76y6c
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WRAP-improved-reliability-performance-post-deposition-annealed-ALD-SiO2-2022.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (826Kb) | Preview |
Official URL: http://dx.doi.org/10.4028/p-b76y6c
Abstract
A systematic capacitance-voltage (C-V) and time-dependent dielectric breakdown (TDDB) study on silicon carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) that use silicon dioxide (SiO2) is shown in this paper. Oxides were formed using atomic layer deposition (ALD), low-pressure chemical vapour deposition (LPCVD) or direct thermal growth in nitrous oxide (N2O) ambient, where both deposited oxides were post-deposition annealed in N2O ambient, too. The electrical characterisation results reveal that the ALD-deposited and N2O-annealed oxides show the best capacitance-voltage (C-V) characteristics, with flatband and hysteresis voltages (VFB) averaging 1.44 V and 0.41 V, respectively. When measuring the leakage current levels at 175°C, the ALD-deposited MOSCAPs’ breakdown electric fields are averaging similar to their counterparts at 9.71 MV/cm. MOSCAPs which utilized ALD-deposited SiO2 also showed 29% and 345% increased average injected charge-to 63% failure (QBD,63%) at 9 MV/cm and 9.6 MV/cm, respectively, when comparing these devices to their direct thermally grown SiO2 counterparts.
| Item Type: | Journal Article | |||||||||
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| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | |||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Atomic layer deposition, Annealing of metals, Breakdown (Electricity), Silicon carbide, Metal oxide semiconductors | |||||||||
| Journal or Publication Title: | Materials Science Forum | |||||||||
| Publisher: | Trans Tech Publications Ltd. | |||||||||
| ISSN: | 1662-9752 | |||||||||
| Official Date: | 31 May 2022 | |||||||||
| Dates: |
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| Volume: | 1062 | |||||||||
| Page Range: | pp. 325-329 | |||||||||
| DOI: | 10.4028/p-b76y6c | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Access rights to Published version: | Open Access (Creative Commons) | |||||||||
| Date of first compliant deposit: | 10 August 2022 | |||||||||
| Date of first compliant Open Access: | 24 August 2022 | |||||||||
| RIOXX Funder/Project Grant: |
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| Is Part Of: | 1 |
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