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Investigation into the third quadrant characteristics of silicon carbide MOSFET
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Tang, Lei, Jiang, Huaping, Zhong, Xiaohan, Qiu, Guanqun, Mao, Hua, Jiang, Xiaofeng, Qi, Xiaowei, Du, Changhong, Peng, Qianlei, Liu, Li and Ran, Li (2023) Investigation into the third quadrant characteristics of silicon carbide MOSFET. IEEE Transactions on Power Electronics, 38 (1). pp. 1155-1165. doi:10.1109/tpel.2022.3202705 ISSN 0885-8993.
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Official URL: https://doi.org/10.1109/tpel.2022.3202705
Abstract
Owing to the superior performances, silicon carbide (SiC) metal oxide semiconductor field effect transistors ( mosfet s) attract a lot of attention. To increase the power density, it is desired to use the third quadrant (3rd-quad) characteristics of the mosfet rather than the externally paralleled Schottky diode for freewheeling during the deadtime. It has been known that the 3rd-quad is far more than a body diode, and the MOS channel is also an important part of it. The channel may be not fully closed and, therefore, play a significant role in the reverse conduction even when the gate is zero or negatively biased. However, a comprehensive study of the 3rd-quad characteristics is still to be conducted. In this article, experiments and simulations are conducted and a physical model is developed to explain the 3rd-quad characteristics of the SiC mosfet . It reveals how and why the 3rd-quad characteristics are affected by the gate voltage and the junction temperature. This article is helpful for not only the application of SiC mosfet but also the device design.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| SWORD Depositor: | Library Publications Router | ||||||||
| Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||||
| Publisher: | IEEE | ||||||||
| ISSN: | 0885-8993 | ||||||||
| Official Date: | January 2023 | ||||||||
| Dates: |
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| Volume: | 38 | ||||||||
| Number: | 1 | ||||||||
| Page Range: | pp. 1155-1165 | ||||||||
| DOI: | 10.1109/tpel.2022.3202705 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access |
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