Tong, C. F., Cortes, I., Mawby, P. A. (Philip A.), Covington, James A., 1973- and Morancho, F. (2009) Static and dynamic analysis of split-gate. RESURF stepped oxide (RSO) MOSFETs for 35 V applications. In: 7th Spanish Conference on Electron Devices, Univ Santiago de Compostelea, Santiago de Compostela, Spain, February 11-13, 2009. Published in: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES pp. 250-253.

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Abstract

In this work, the static and dynamic performance of three different proposed trench MOSFET architectures for a 35 V breakdown range have been analyzed by means of extensive TCAD simulations. The trench field-plate in the drift region in RSO MOSFET structures highly improves the Roo-Sp/V-BR tradeoff in comparison with the conventional UMOS counterpart. The Split-Gate RSO MOSFET is an alternative solution in order to reduce the gate-to-drain charge and capacitance, therefore further reduce the switching losses with respect to RSO MOSFET.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES
Publisher:	IEEE
ISBN:	978-1-4244-2838-0
Editor:	Loureiro, AG and Iglesias, NS and Rodriguez, MAA and Figueroa, EC
Official Date:	2009
Number of Pages:	4
Page Range:	pp. 250-253
Identification Number:	10.1109/SCED.2009.4800478
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Title of Event:	7th Spanish Conference on Electron Devices
Type of Event:	Conference
Location of Event:	Univ Santiago de Compostelea, Santiago de Compostela, Spain
Date(s) of Event:	February 11-13, 2009
URI:	http://wrap.warwick.ac.uk/id/eprint/16950

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