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Static and dynamic analysis of split-gate. RESURF stepped oxide (RSO) MOSFETs for 35 V applications

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Tong, C. F., Cortes, I., Mawby, P. A., Covington, James A. and Morancho, F. (2009) Static and dynamic analysis of split-gate. RESURF stepped oxide (RSO) MOSFETs for 35 V applications. In: 7th Spanish Conference on Electron Devices, Univ Santiago de Compostelea, Santiago de Compostela, Spain, February 11-13, 2009. Published in: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES pp. 250-253. ISBN 978-1-4244-2838-0. doi:10.1109/SCED.2009.4800478

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Abstract

In this work, the static and dynamic performance of three different proposed trench MOSFET architectures for a 35 V breakdown range have been analyzed by means of extensive TCAD simulations. The trench field-plate in the drift region in RSO MOSFET structures highly improves the Roo-Sp/V-BR tradeoff in comparison with the conventional UMOS counterpart. The Split-Gate RSO MOSFET is an alternative solution in order to reduce the gate-to-drain charge and capacitance, therefore further reduce the switching losses with respect to RSO MOSFET.

Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES
Publisher: IEEE
ISBN: 978-1-4244-2838-0
Editor: Loureiro, AG and Iglesias, NS and Rodriguez, MAA and Figueroa, EC
Official Date: 2009
Dates:
DateEvent
2009Published
Number of Pages: 4
Page Range: pp. 250-253
DOI: 10.1109/SCED.2009.4800478
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Title of Event: 7th Spanish Conference on Electron Devices
Type of Event: Conference
Location of Event: Univ Santiago de Compostelea, Santiago de Compostela, Spain
Date(s) of Event: February 11-13, 2009

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