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NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

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Balestra, F. (Ferruccio) , Parker, Evan H. C., Leadley, D. R. (David R.), Mantl, Siegfried, Dubois, E., Engstrom, Olof, Clerc, R., Cristoloveanu, Sorin, Kurz, H., Raskin, J.-P. et al.
(2008) NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications. Materials Science in Semiconductor Processing, Vol.11 (No.5-6 Sp. Iss. SI). pp. 148-159. doi:10.1016/j.mssp.2008.09.017 ISSN 1369-8001.

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Official URL: http://dx.doi.org/10.1016/j.mssp.2008.09.017

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Abstract

NANOSIL Network of Excellence [NANOSIL NoE web site < www.nanosil-noe.eu >], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs), and to disseminating the results in a wide scientific and industrial community.

NANOSIL is exploring and assessing the science and technological aspects of nanodevices and operational regimes relevant to the n+4 technology node and beyond. It encompasses projects on nanoscale CMOS and beyond-CMOS. Innovative concepts, technologies and device architectures are proposed-with fabrication down to the finest features, and utilising a wide spectrum of advanced deposition and processing capabilities, extensive characterization and very rigorous device modeling. This work is carried out through a network of joint processing, characterization and modeling platforms. This critical interaction strengthens European integration in nanoelectronics and will speed up technological innovation for the nanoelectronics of the next two to three decades. (C) 2008 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Metal oxide semiconductors, Complementary, Nanowires, Nanoelectronics, Nanostructures
Journal or Publication Title: Materials Science in Semiconductor Processing
Publisher: Pergamon
ISSN: 1369-8001
Official Date: October 2008
Dates:
DateEvent
October 2008Published
Volume: Vol.11
Number: No.5-6 Sp. Iss. SI
Number of Pages: 12
Page Range: pp. 148-159
DOI: 10.1016/j.mssp.2008.09.017
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Version or Related Resource: Originally presented at: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting Strasbourg, France, 26-30 May 2008
Conference Paper Type: Paper
Type of Event: Conference

Data sourced from Thomson Reuters' Web of Knowledge

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