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Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures
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Gunaydin, Yasin, Jahdi, Saeed, Yuan, Xibo, Yu, Renze, Shen, Chengjun, Munagala, Sai Priya, Hopkins, Andrew, Simpson, Nick, Hosseinzadehlish, Mana, Ortiz-Gonzalez, Jose Angel and Alatise, Olayiwola M. (2022) Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures. Microelectronics Reliability, 138 . 114711. doi:10.1016/j.microrel.2022.114711 ISSN 0026-2714.
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WRAP-unclamped-inductive-stressing-GaN-SiC-Cascode-power-devices-failure-elevated-temperatures-2022.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (2899Kb) | Preview |
Official URL: http://dx.doi.org/10.1016/j.microrel.2022.114711
Abstract
In this paper, the ruggedness performance of GaN HEMT and SiC JFET devices in cascode configuration with a low voltage silicon power MOSFET has been evaluated experimentally. The impact of the bus voltage on the drain current and avalanche energy are investigated as well as the temperature sweep to enable analysis of the alternation of these parameters on the Unclamped Inductive Switching (UIS) ruggedness of cascode devices. The experimental measurements show that the GaN cascode devices have lower avalanche energy rating when compared with the closely rated SiC cascode devices just before the failure. SiC cascode devices can also withstand higher bus voltage in comparison to GaN cascode devices when under electrothermal stress by unclamped inductive switching. The analysis of transfer characteristics and leakage current of SiC JFET & GaN HEMT cascode structures following UIS stress have also been performed together with Computed Tomography (CT) Scan imaging to determine the per-area avalanche energy density.
Item Type: | Journal Article | ||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
Library of Congress Subject Headings (LCSH): | Silicon carbide, Gallium nitride, Amplifiers (Electronics), Tomography, Wide gap semiconductors -- Materials | ||||||||
Journal or Publication Title: | Microelectronics Reliability | ||||||||
Publisher: | Pergamon-Elsevier Science Ltd. | ||||||||
ISSN: | 0026-2714 | ||||||||
Official Date: | November 2022 | ||||||||
Dates: |
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Volume: | 138 | ||||||||
Article Number: | 114711 | ||||||||
DOI: | 10.1016/j.microrel.2022.114711 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||
Date of first compliant deposit: | 1 November 2022 | ||||||||
Date of first compliant Open Access: | 2 November 2022 | ||||||||
RIOXX Funder/Project Grant: |
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