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Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators

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Hooper, I. R., Khorani, Edris, Romain, X., Barr, L. E., Niewelt, T., Saxena, S., Wratten, A., Grant, Nicholas E., Murphy, J. D. and Hendry, E. (2022) Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators. Journal of Applied Physics, 132 . 233102. doi:10.1063/5.0128234 ISSN 0021-8979.

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Official URL: https://doi.org/10.1063/5.0128234

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Abstract

For a diverse range of semiconductor devices, the charge carrier lifetime is an essential characteristic. However, the carrier lifetime is difficult to control, as it is usually determined by a variety of recombination processes. For indirect bandgap materials, it is well known that effective carrier lifetimes can be improved by passivating the surface, effectively extinguishing surface-related recombination processes. However, for some applications, such as photomodulators for sub-infrared radiation, it is beneficial to tailor lifetimes to specific values, in this particular case trading off between photo-efficiency and switching speed. In this paper, we design a new type of silicon-based metamaterial with a tunable electron–hole lifetime. By periodically patterning a dielectric surface passivation layer, we create a metamaterial whereby the filling fraction of passivated relative to unpassivated areas dictates the effective charge carrier lifetime. We demonstrate tunable lifetimes between 200 μs and 8 ms in a 670 μm thick Si wafer, though in principle our approach allows one to generate any lifetime between the fully passivated and unpassivated limits of a bulk semiconductor. Finally, we investigate the application of these metamaterials as photomodulators, finding switching times that depend upon both the photoexcitation intensity, wafer thickness, and the carrier lifetime.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Light modulators, Semiconductors, Silicon -- Electric properties, Charge transfer, Electron transport, Thin films
Journal or Publication Title: Journal of Applied Physics
Publisher: American Institute of Physics
ISSN: 0021-8979
Official Date: 16 December 2022
Dates:
DateEvent
16 December 2022Available
25 November 2022Accepted
Volume: 132
Number of Pages: 8
Article Number: 233102
DOI: 10.1063/5.0128234
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 19 December 2022
Date of first compliant Open Access: 19 December 2022
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/S036466/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/S036261/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/W003341/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/V047914/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/V037749/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/R004781/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/R004781/1QinetiQ (Firm)http://viaf.org/viaf/168836647
EP/R513374/1Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
RPG-2020-377Leverhulme Trusthttp://dx.doi.org/10.13039/501100000275
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