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Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators
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Hooper, I. R., Khorani, Edris, Romain, X., Barr, L. E., Niewelt, T., Saxena, S., Wratten, A., Grant, Nicholas E., Murphy, J. D. and Hendry, E. (2022) Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators. Journal of Applied Physics, 132 . 233102. doi:10.1063/5.0128234 ISSN 0021-8979.
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WRAP-Engineering-the-carrier-lifetime-and-switching-speed-in-Si-based-mm-wave-photomodulators-Murphy-2022.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1986Kb) | Preview |
Official URL: https://doi.org/10.1063/5.0128234
Abstract
For a diverse range of semiconductor devices, the charge carrier lifetime is an essential characteristic. However, the carrier lifetime is difficult to control, as it is usually determined by a variety of recombination processes. For indirect bandgap materials, it is well known that effective carrier lifetimes can be improved by passivating the surface, effectively extinguishing surface-related recombination processes. However, for some applications, such as photomodulators for sub-infrared radiation, it is beneficial to tailor lifetimes to specific values, in this particular case trading off between photo-efficiency and switching speed. In this paper, we design a new type of silicon-based metamaterial with a tunable electron–hole lifetime. By periodically patterning a dielectric surface passivation layer, we create a metamaterial whereby the filling fraction of passivated relative to unpassivated areas dictates the effective charge carrier lifetime. We demonstrate tunable lifetimes between 200 μs and 8 ms in a 670 μm thick Si wafer, though in principle our approach allows one to generate any lifetime between the fully passivated and unpassivated limits of a bulk semiconductor. Finally, we investigate the application of these metamaterials as photomodulators, finding switching times that depend upon both the photoexcitation intensity, wafer thickness, and the carrier lifetime.
| Item Type: | Journal Article | ||||||||||||||||||||||||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||||||||||||||||||||
| Library of Congress Subject Headings (LCSH): | Light modulators, Semiconductors, Silicon -- Electric properties, Charge transfer, Electron transport, Thin films | ||||||||||||||||||||||||||||||
| Journal or Publication Title: | Journal of Applied Physics | ||||||||||||||||||||||||||||||
| Publisher: | American Institute of Physics | ||||||||||||||||||||||||||||||
| ISSN: | 0021-8979 | ||||||||||||||||||||||||||||||
| Official Date: | 16 December 2022 | ||||||||||||||||||||||||||||||
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| Volume: | 132 | ||||||||||||||||||||||||||||||
| Number of Pages: | 8 | ||||||||||||||||||||||||||||||
| Article Number: | 233102 | ||||||||||||||||||||||||||||||
| DOI: | 10.1063/5.0128234 | ||||||||||||||||||||||||||||||
| Status: | Peer Reviewed | ||||||||||||||||||||||||||||||
| Publication Status: | Published | ||||||||||||||||||||||||||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||||||||||||||||||||
| Date of first compliant deposit: | 19 December 2022 | ||||||||||||||||||||||||||||||
| Date of first compliant Open Access: | 19 December 2022 | ||||||||||||||||||||||||||||||
| RIOXX Funder/Project Grant: |
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